Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Scholarly Works

• Apostolov, A. T.; Apostolova, I. N.; Wesselinowa, J. M. Theoretical Study of the Phonon and Electrical Conductivity Properties of Pure and Sr-Doped LaMnO3 Thin Films. Materials 2024, 17, 1995. doi:10.3390/ma17091995
• Zheng, R.; Zhou, Y.; Liu, L.; Gao, M.; Chen, H.; Chang, A.; Zhao, P. Crystallographic dependence of the electrical transport mechanism in La-Mn-O thermosensitive thin films. Journal of Alloys and Compounds 2024, 973, 172933. doi:10.1016/j.jallcom.2023.172933
• Maity, I.; Parween, S.; Mukherjee, A. K.; Thakur, A. D. Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S. Journal of Materials Science: Materials in Electronics 2024, 35. doi:10.1007/s10854-023-11852-2
• Rodriguez-Lamas, R.; Pla, D.; Pirovano, C.; Chaix-Pluchery, O.; Moncasi, C.; Boudard, M.; Vannier, R.-N.; Jiménez, C.; Burriel, M. Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance. Materials Today Electronics 2023, 5, 100054. doi:10.1016/j.mtelec.2023.100054
• Moncasi, C.; Lefèvre, G.; Villeger, Q.; Rapenne, L.; Khuu, T.; Wilhelm, F.; Rogalev, A.; Jiménez, C.; Burriel, M. Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States. Advanced Materials Interfaces 2023, 10. doi:10.1002/admi.202202496
• Zhang, Y.; Zhang, X.; Ni, J.; Ni, C. Pr-Doped SrTi0.5Mn0.5O3-δ as an Electrode Material for a Quasi-Symmetrical Solid Oxide Fuel Cell Using Methane and Propane Fuel. ACS applied materials & interfaces 2023, 15, 3974–3984. doi:10.1021/acsami.2c18530
• Maity, I.; Mukherjee, A. K.; Thakur, A. D. Enhanced stability and low operational voltage of resistive switching behavior in defect engineered LaMnO3 film. Applied Physics A 2022, 129. doi:10.1007/s00339-022-06265-7
• Khuu, T.; Lefèvre, G.; Jiménez, C.; Roussel, H.; Riaz, A.; Blonkowski, S.; Jalaguier, E.; Bsiesy, A.; Burriel, M. La2NiO4+δ‐Based Memristive Devices Integrated on Si‐Based Substrates. Advanced Materials Technologies 2022, 7. doi:10.1002/admt.202200329
• Moncasi, C.; Lefèvre, G.; Villeger, Q.; Rapenne, L.; Roussel, H.; Bsiesy, A.; Jiménez, C.; Burriel, M. Structural Defects Improve the Memristive Characteristics of Epitaxial La0.8Sr0.2MnO3‐Based Devices. Advanced Materials Interfaces 2022, 9. doi:10.1002/admi.202200498
• Lo Presti, F.; Pellegrino, A. L.; Malandrino, G. Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems. Advanced Materials Interfaces 2022, 9. doi:10.1002/admi.202102501
• Taranu, B.-O.; Vlazan, P.; Svera, P.; Poienar, M.; Sfirloaga, P. New functional hybrid materials based on clay minerals for enhanced electrocatalytic activity. Journal of Alloys and Compounds 2022, 892, 162239. doi:10.1016/j.jallcom.2021.162239
• Meunier, B.; Martinez, E.; Rodriguez-Lamas, R.; Pla, D.; Burriel, M.; Jiménez, C.; Yamashita, Y.; Renault, O. Unraveling the Resistive Switching Mechanisms in LaMnO3+δ-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements. ACS Applied Electronic Materials 2021, 3, 5555–5562. doi:10.1021/acsaelm.1c00968
• Rodriguez-Lamas, R.; Pirovano, C.; Stangl, A.; Pla, D.; Jónsson, R.; Rapenne, L.; Sarigiannidou, E.; Nuns, N.; Roussel, H.; Chaix-Pluchery, O.; Boudard, M.; Jiménez, C.; Vannier, R.-N.; Burriel, M. Epitaxial LaMnO3 films with remarkably fast oxygen transport properties at low temperature. Journal of Materials Chemistry A 2021, 9, 12721–12733. doi:10.1039/d0ta12253j
• Angel, S.; Tapia, J.; Gallego, J.; Hagemann, U.; Wiggers, H. Spray-Flame Synthesis of LaMnO3+δ Nanoparticles for Selective CO Oxidation (SELOX). Energy & Fuels 2021, 35, 4367–4376. doi:10.1021/acs.energyfuels.0c03659
• Yufeng, C.; Wang, G.; Zhengfeng, S.; Sheng-gao, W.; Yangwu, M.; Quanrong, D.; Jingjing, Y. Magnetic characteristics of LaMnO3+δ thin films deposited by RF magnetron sputtering in an O2/Ar mixture gas. Materials Research Express 2021, 8, 016101. doi:10.1088/2053-1591/abd6a3
• Meunier, B.; Martinez, E.; Rodriguez-Lamas, R.; Pla, D.; Burriel, M.; Boudard, M.; Jiménez, C.; Rueff, J.-P.; Renault, O. Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy. Journal of Applied Physics 2019, 126, 225302. doi:10.1063/1.5125420
• Meunier, B.; Pla, D.; Rodriguez-Lamas, R.; Boudard, M.; Chaix-Pluchery, O.; Martinez, E.; Chevalier, N.; Jiménez, C.; Burriel, M.; Renault, O. Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO3+δ. ACS Applied Electronic Materials 2019, 1, 675–683. doi:10.1021/acsaelm.9b00030

Explore citations to this article at