Supporting Information
| Supporting Information File 1: The supporting information illustrates the fitting model used in the evaluation of the relative intensities of the reflection peaks obtained in grazing incidence X-ray diffraction and presents all PL spectra measured using the excitation power and temperature dependencies for samples A and B. | ||
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Cite the Following Article
Substrate and Mg doping effects in GaAs nanowires
Perumal Kannappan, Nabiha Ben Sedrine, Jennifer P. Teixeira, Maria R. Soares, Bruno P. Falcão, Maria R. Correia, Nestor Cifuentes, Emilson R. Viana, Marcus V. B. Moreira, Geraldo M. Ribeiro, Alfredo G. de Oliveira, Juan C. González and Joaquim P. Leitão
Beilstein J. Nanotechnol. 2017, 8, 2126–2138.
https://doi.org/10.3762/bjnano.8.212
How to Cite
Kannappan, P.; Sedrine, N. B.; Teixeira, J. P.; Soares, M. R.; Falcão, B. P.; Correia, M. R.; Cifuentes, N.; Viana, E. R.; Moreira, M. V. B.; Ribeiro, G. M.; de Oliveira, A. G.; González, J. C.; Leitão, J. P. Beilstein J. Nanotechnol. 2017, 8, 2126–2138. doi:10.3762/bjnano.8.212
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- Pimenta, A. C. S.; Limborço, H.; González, J. C.; Cifuentes, N.; Ramos, S. L. L. M.; Matinaga, F. M. Photodegradation of Si-doped GaAs nanowire. RSC advances 2019, 9, 39488–39494. doi:10.1039/c9ra06365j
- Limborço, H.; Matinaga, F. M.; da Silva, M. I. N.; de Melo, O.; Viana, E. R.; Leitão, J. P.; Moreira, M. V. B.; Ribeiro, G. M.; de Oliveira, A. G.; González, J. C. Mg-Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy. The Journal of Physical Chemistry C 2019, 123, 12807–12812. doi:10.1021/acs.jpcc.9b01668
- Sedrine, N. B.; Ribeiro-Andrade, R.; Gustafsson, A.; Soares, M.; Bourgard, J.; Teixeira, J. P.; Salomé, P. M. P.; Correia, M. R.; Moreira, M. V. B.; de Oliveira, A. G.; González, J. C.; Leitão, J. P. Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure. Nanoscale 2018, 10, 3697–3708. doi:10.1039/c7nr08395e
