1 article(s) from Akbulut, Mustafa
MRAM device structure with a stack radius of 10 nm. Materials, with exception of contact regions, a...
Jump to Figure 1
Characteristic J–V curve built from literature [4-7] with similar CoFeB/MgO/CoFeB MTJ with thickness of ...
Jump to Figure 2
Graph of materials properties used in model construction. From top to bottom: Seebeck values of CoF...
Jump to Figure 3
Schematic top-down view and quarter cross-section view of the simulated geometries. The dotted line...
Jump to Figure 4
Thermal profiles of configuration II with SiO2 passivation with an applied voltage of 0.3 V in “pos...
Jump to Figure 5
Thermal profiles of configuration IV with SiO2 passivation with an applied voltage of 0.3 V in “pos...
Jump to Figure 6
Results for different passivation materials. Tpeak (black circles), Tfree (red upward triangles) an...
Jump to Figure 7
Tpeak (black circles), Tfree (red upward triangle) and Tfixed (blue downward triangles), recorded f...
Jump to Figure 8
Individual heat contributions from Peltier effect and tunneling around the MTJ for configuration I ...
Jump to Figure 9
Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160
Subscribe to our Latest Articles RSS Feed.
Register and get informed about new articles.
Follow the Beilstein-Institut