Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• proposed RTD as a function of the electron energy. Effect of BC and CN defects at the interface between the left barrier and the left spacer on (a) current–voltage characteristic and (b) the transmission trough the proposed RTD as a function of the electron energy. Tight-binding parameters for the CBN

Nanotribology at high temperatures

• Saurav Goel,
• Alexander Stukowski,
• Gaurav Goel,
• Xichun Luo and
• Robert L. Reuben

Beilstein J. Nanotechnol. 2012, 3, 586–588, doi:10.3762/bjnano.3.68

• near the substrate’s melting point. In this commentary we address a major constraint concerning its experimental verification. Keywords: CBN; diamond; high temperature; Introduction It was postulated some time ago that a component sliding under lightly loaded conditions should experience very low

• cycle” shown in Figure 1. This cycle involves the four elements carbon (C), boron (B), silicon (Si) and nitrogen (N). The combination of any two chemical species from this composition cycle produces a compound exhibiting ultra-high hardness, e.g., CBN, SiC, Si3N4, B4C and the recently recognized C3N4

• materials from this composition cycle, diamond (C) and cubic boron nitride (CBN), possess ultra-high hardness (attributed both to sp3-bonding and relatively short bond lengths) and, for this reason, they are frequently used to manufacture cutting tips. While diamond resides in a cubic lattice structure, CBN