Nonlinear features of the superconductor–ferromagnet–superconductor φ₀ Josephson junction in the ferromagnetic resonance region

• Aliasghar Janalizadeh,
• Ilhom R. Rahmonov,
• Sara A. Abdelmoneim,
• Yury M. Shukrinov and
• Mohammad R. Kolahchi

Beilstein J. Nanotechnol. 2022, 13, 1155–1166, doi:10.3762/bjnano.13.97

• simulations. The role of the DC superconducting current and the state with negative differential resistance (NDR) in the I–V characteristics were not clarified. Also, the effects of the Josephson-to-magnetic energy ratio and the spin–orbit coupling (SOC) were not investigated at that time. In the present

• current through the φ0 junction. The total I–V characteristics are demonstrated in the inset to this figure. We see the correlation of the fold-over effect in the superconducting current (blue) with the NDR part of the I–V curve. The peak in the superconducting current and the minimum of the I–V curve are

• at the same voltage value. So, both effects reflect the nonlinear features of the ferromagnetic resonance in the φ0 junction. However, in contrast to the fold-over and ADD effects, which begin to appear at relatively small deviations from the linear case, the nonlinearity in case of the NDR plays a

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• devices have linear I–V curves over a wide range of the bias voltage. However, the current decreases as the voltage increases further. This indicates a negative differential resistance (NDR) behavior in these devices, which comes from the interaction between the discrete states in the channel region and

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• heterojunction; armchair boron nitride nanoribbon (ABNNR); armchair graphene nanoribbon (AGNR); negative differential resistance (NDR); nonequilibrium Green’s function (NEGF); resonant tunneling diode (RTD); substitutional defects; Introduction 2D materials have gained tremendous research interest due to the

• as platforms for fully two-dimensional nanoelectronic devices [7][8][9][10][11]. Resonant tunneling diodes (RTDs) are among various electronic devices realized on the platform of 2D Gr/hBN heterostructures [12][13][14][15][16]. RTDs exhibit negative differential resistance (NDR) and have a wide range

• rather high transmission probabilities. Electrons with other energies have an extremely small chance of passing through. This causes RTDs to exhibit NDR in their current–voltage characteristic. Conventionally, RTDs are made by vertical stacking of bulk semiconductor materials with different bandgap

Multilayer capsules made of weak polyelectrolytes: a review on the preparation, functionalization and applications in drug delivery

• Varsha Sharma and
• Anandhakumar Sundaramurthy

Beilstein J. Nanotechnol. 2020, 11, 508–532, doi:10.3762/bjnano.11.41

• crosslinking without the need of post treatment [55]. Stable multilayered hollow capsules of N-methyl-2-nitro-diphenylamine-4-diazoresin/m-methylphenol-formaldehyde resin (NDR/MPR) on a PS core based on in situ coupling were found to withstand solvent etching without further processing [55]. The reaction

Invariance of molecular charge transport upon changes of extended molecule size and several related issues

• Ioan Bâldea

Beilstein J. Nanotechnol. 2016, 7, 418–431, doi:10.3762/bjnano.7.37

• computed approximately within ubiquitous wide- and flat-band limits (WBL and FBL, respectively). To exemplify the limitations of the latter, the phenomenon of negative differential resistance (NDR) is considered. It is shown that the exactly computed current may exhibit a substantial NDR, while the NDR

• numerical code to compute transport properties (which should not change whatever the size of the central region chosen). To see that the results presented above are also relevant for more pragmatic purposes, the effect of negative differential resistance (NDR) is discussed next in conjunction with common

• approximate I–V curves significantly differ from the exact ones at higher biases. The wide-band approximation fails to describe the NDR regime exhibited by the exact I–V curves (Figure 2a). This is due to the fact that the width of the allowed energy window within the WBL (which is the Fermi energy window of

Negative differential electrical resistance of a rotational organic nanomotor

• Hatef Sadeghi,
• Sara Sangtarash,
• Qusiy Al-Galiby,
• Rachel Sparks,
• Steven Bailey and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 2332–2337, doi:10.3762/bjnano.6.240

• aim is to demonstrate that this coupling between a controlled geometry and electrical properties can lead to desirable nonlinear current–voltage relations and negative differential resistance (NDR). As a specific example that demonstrates the general principle, we analyse the molecular-scale NEM shown

• conformational changes when the C60 molecules are attached to metallic electrodes. Our calculations will demonstrate that such conformation changes lead to NDR. Results and Discussion The dumbbell molecular switch shown in Figure 1 consists of three main sections, the backbone, the terminating groups and the

• temperature for applied biases between −1 and 1 V. By differentiating the current with respect to the bias voltage V, one obtains the differential conductance (Figure 4, green dashed line) of the device, which clearly shows regions of NDR behaviour arising from the change in the energy landscape. The higher

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• low, intrinsic dark current and noise. Keywords: heterojunction; multiwall carbon nanotubes; NDR; photodetector; tunneling; Introduction Negative differential resistance (NDR), where the current decreases as a function of voltage, has been observed in the current–voltage curves of several types of

• exhibits a current–voltage characteristic showing a marked tunneling-like shape with a NDR in the region between 1.5 and 2.2 V of excitation light. In fact, in this region, the observed current decreases and varies with the incident photon wavelength. The effect of the incident radiation is so strong it

• are no reports on the observation of the NDR generated by light radiation to date. In this paper, we report on the device characteristics, optoelectronic properties and, for the first time, a portion of the I–V curve showing a bell-shape tunneling behavior with a marked presence of a NDR. The