Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• on Pt(111) [14], and SiC() [16]. These resonances were interpreted as a collective excitation of the graphene π orbitals near the void [54], which depends on the coupling of the C atoms to the substrate surface. Therefore, the graphene–surface hybridization plays an important role in the occurrence

• previously for graphene on SiC(0001), where intact graphene was lifted from the surface after forming a Au tip–graphene bond and retracting the tip [63]. Hysteresis loops in Δf and I were then likewise observed. In the findings presented here, intact graphene does not exhibit hysteretic behavior, although

• one may expect a similar Au–C bond as proposed for graphene on SiC(0001). Most likely, the graphene–Ir(111) coupling is stronger than the graphene–SiC(0001) interaction and, thereby, prevents an identifiable lifting of graphene from the metal surface. The dangling bonds of the defect, however, can

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• development is to use a different membrane, for example SiC (lattice constant a = 0.435 nm), since it can grow as a single-crystalline layer and ensure epitaxial sample growth on top of it, for example, the growth of NbN (a = 0.439 nm) with a lattice mismatch of 1%. Epitaxial growth of Py films on single

• -crystal SiC membranes is also feasible. Py epitaxial films were obtained on single-crystal MgO substrates [36] that have a lattice constant of 0.42 nm. It was demonstrated that the epitaxial SiC layer can serve as an excellent mask material for KOH etching of Si [37]. However, etching to a crystalline

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• of SiC nanomaterials through surface carbonization of SiC nanowires and hydrolysis. SiC@C-ZnO composites were synthesized with different dosages of ZnNO3·6H2O. Composition, microstructure, and electromagnetic properties of the composites were characterized and analyzed. Results from TEM and XRD show

• that crystalline ZnO particles adhere to the surface of amorphous carbon, and the ZnO content increases as a function of a dosage of ZnNO3·6H2O. The as-prepared SiC@C-ZnO hybrids exhibit effective electromagnetic absorption, which is related to a synergy effect of different dielectric loss processes

• mm). The excellent properties of the materials suggest great prospect as electromagnetic absorbers. Keywords: carbon; dielectric; electromagnetic absorption; SiC nanowires; ZnO; Introduction With increasing functionality of electronic devices, the widening of the working frequency bands, and the

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• . Electrode materials include diamond, SiC, Si, and Ge. Table 3 summarizes nanowire materials commonly used for NEM switches. The research on NWs-NEM switches can be classified into two types, namely manufacturing techniques and in situ techniques. In the former, the switches are first processed by top-down

• et al. [8] made a CuO NWs switch, 3 µm long, 80 nm in diameter, and 120 nm in the gap, with a pull-in voltage of 12.5 V. Feng et al. [40] prepared SiC nanowire NEM switches using bottom-up techniques. The pull-in voltage ranges from one to several volts and the response time is below microseconds

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• quantification of extremely small amounts of protein. Experimental As-cast Mg ingots were sliced into rectangular coupons (15 × 15 × 4 mm3) for anodic oxidation treatment. Prior to the treatment, all specimens were ground using SiC paper up to 1200 grit, and then degreased with ethanol and deionized water in

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• ][17][18][19], Ru [20][21], Pt [22][23], SiC [24][25][26], and SiO2 [27][28][29]. Unfortunately, the obtained experimental data showed that the incompatible crystalline structure of the above materials leads to significant suppression of the carrier mobility of graphene [13][30]. It is now assumed that

Scanning tunneling microscopy and spectroscopy of rubrene on clean and graphene-covered metal surfaces

• Karl Rothe,
• Alexander Mehler,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2020, 11, 1157–1167, doi:10.3762/bjnano.11.100

• indicated by the comparison of the superstructure in Figure 6 with the one obtained for a thicker C42H28 film on graphene-covered SiC(0001) [45]. In the latter work a smaller unit cell was reported with individual C42H28 molecules appearing uniformly in STM images. It is likely that the difference to the

• superstructure depicted in Figure 6 results from an efficiently decoupled molecule residing on top of a molecular film deposited on nearly free graphene on SiC(0001). Similar to observations on Pt(111), C42H28 molecules on graphene appear with two or three lobes in STM images, which are labeled α and β in Figure

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• divacancy (DV) in silicon carbide (SiC) [18][19][20], the silicon monovacancy in SiC [21][22][23], the carbon antisite vacancy pair in SiC [24][25], the silicon vacancy and nitrogen (N) atom on an adjacent carbon site in SiC [26][27][28], and rare-earth impurities in complex oxides [29]. While the NV center

• sections of this paper, while we remind the readers of recent reviews on the other materials or emerging point defects in diamond [10][31][42][59][60][61] and SiC [7][11][62]. In this review, the material of focus is h-BN. The current progress indicates h-BN is distinguishing itself with great potential as

• et al. [5] took the first step in this direction, showing how basic considerations of host properties (e.g., nuclear spin isotopes, bandgap, and spin–orbit coupling) can guide the identification of quantum point defects analogous to the diamond NV center, elevating SiC as such a host, with now many

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were

• ; Introduction Silicon carbide (SiC) is an established material for many electronic devices and has also been considered for photonics applications recently. After the improvement of the purity of the material and the isolation of point defects (primarily vacancies), SiC has been considered to host physical

• systems for quantum devices such as single-photon sources and spin–photon interfaces for quantum interconnects [1][2][3]. Points defects or color centers in SiC are considered as alternative candidates for quantum applications such as solid-state quantum bits [4][5], spin–photon interfaces [6], single

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

• thermal (dissipation) damage to the biological sample. For a given minimal and microwave probe power, NV photon emission was enhanced by the optical collection design of the magnetometer, achieved through increasing the NV concentration and by using SiC as a substrate to aid in heat transfer. After

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15–45 mol % SiC) were obtained by mixing

• °C. The ZnO/SiC nanocomposites were characterized by a higher concentration of chemisorbed oxygen, higher activation energy of conductivity, and higher sensor response towards CO and NH3 as compared with ZnO nanofibers. The obtained experimental results were interpreted in terms of the formation of

• an n–n heterojunction at the ZnO/SiC interface. Keywords: electrospinning; high temperature gas sensor; n–n heterojunction; ZnO/SiC nanocomposite; Introduction The risk of air pollution is growing due to the development of new technologies in the chemical, metallurgical and food industries, the use

Choosing a substrate for the ion irradiation of two-dimensional materials

• Egor A. Kolesov

Beilstein J. Nanotechnol. 2019, 10, 531–539, doi:10.3762/bjnano.10.54

• defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed in the incident ion energy range from 100 eV to 250 MeV. Cu, SiO2, SiC and Al2O3 substrates were analyzed. The considered substrate-related defect formation mechanisms are sputtering

• taking the substrate effects into account. The analysis was performed for the most common ions used for monolayer irradiation: He, Ar, Xe, C, N and Si; the chosen substrates include Cu, SiO2, SiC and Al2O3. Copper is a widely available metal and is traditionally used as a substrate in 2D material science

• . For the uniformity of the study, a classical semiconducting material SiC was added as another commonly used substrate. Al2O3 is also an insulator that is becoming a more interesting material to support monolayers given that is has a small effect on their properties; besides, comparing it to SiO2 is

Improving control of carbide-derived carbon microstructure by immobilization of a transition-metal catalyst within the shell of carbide/carbon core–shell structures

• Teguh Ariyanto,
• Jan Glaesel,
• Andreas Kern,
• Gui-Rong Zhang and
• Bastian J. M. Etzold

Beilstein J. Nanotechnol. 2019, 10, 419–427, doi:10.3762/bjnano.10.41

• were employed to produce carbon combining porosity and graphitic structure [17][18][19]. Among them, the carbide-derived carbon (CDC) is a promising route. CDC can be synthesized through the selective extraction of metals or metalloid atoms from metal carbides (MexC, e.g., TiC, SiC, VC, and Mo2C) by

Sputtering of silicon nanopowders by an argon cluster ion beam

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Zhenguo Wang,
• Wenbin Zuo,
• Sergey Belykh,
• Alexander Tolstogouzov,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

• surface morphology, with preferable erosion of hills as compared with valleys [6], which also results in the smoothing of the surface [7]. Sputtering by an argon cluster beam has been studied for many pure metals (Cu, Ag, Au, W, Pt, Ni) and their alloys, semiconductors (Si and SiC), and insulators (SiO2

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• silver films were characterized using atomic force microscopy (AFM) in contact mode on a CP-II AFM (Bruker-Veeco) with SiC cantilevers to determine the topography and surface roughness (root mean square roughness, Rq). Scanning electron microscopy (SEM) of the silver films was performed on a Philips XL

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

• José Carlos Abadillo-Uriel,
• Belita Koiller and
• María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

• analysed materials. The range of values for masses and gaps available in the literature and summarised in Table 1 are shown by the extended symbols next to the corresponding material composition. Effective masses and band-gap energies of selected 2D materials. ZnS, CdS, CdSe and SiC have a direct band gap

Characterization of the microscopic tribological properties of sandfish (Scincus scincus) scales by atomic force microscopy

• Weibin Wu,
• Christian Lutz,
• Simon Mersch,
• Richard Thelen,
• Christian Greiner,
• Guillaume Gomard and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2018, 9, 2618–2627, doi:10.3762/bjnano.9.243

• (National Instruments, Austin, USA) code. The tests were conducted at room temperature and in air with 50% relative humidity. Sample preparation for the non-biological samples relied on grinding with SiC papers of #800 down to #4000 grid. Mechanical polishing was carried out with a 3 µm diamond suspension

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• porous, amorphous structure that is able to accommodate the volumetric changes of the Si during the lithiation/delithiation process. The formation of silicon carbide (SiC) or any other crystalline SiOx phases in detectable amounts is also avoided at this temperature as can be reasoned from the absence of

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• been demonstrated. Promising results have also recently been achieved for electroluminescent SiNCs embedded in SiC film [21] and in electroluminescent capacitive structures [22]. Studies that investigated possibilities to improve external quantum efficiency of such devices using photonic structures

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• keV He+ irradiation for a relatively low fluence of 8 × 1014 ions/cm2 before the sample turns amorphous [13]. Transforming graphene into fullerenes has been carried out by electron irradiation [14], and graphitic nanostripes have been obtained from SiC by MeV Ta or Pb irradiation [15]. In addition

Cyclodextrin inhibits zinc corrosion by destabilizing point defect formation in the oxide layer

• Abdulrahman Altin,
• Maciej Krzywiecki,
• Adnan Sarfraz,
• Cigdem Toparli,
• Claudius Laska,
• Philipp Kerger,
• Aleksandar Zeradjanin,
• Karl J. J. Mayrhofer,
• Michael Rohwerder and
• Andreas Erbe

Beilstein J. Nanotechnol. 2018, 9, 936–944, doi:10.3762/bjnano.9.86

• role in this context. This mechanism of corrosion inhibition was previously undescribed and may be exploited systematically in design of inhibitors. Experimental Zinc sheets (99.95%; Goodfellow; thickness 1.5 mm) were cut to a size of 2 cm × 2 cm, ground with 1000P SiC paper (1000P), cleaned with soap

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• contact when switching to the on state [70]. Silicon carbide: Silicon carbide (SiC), well-known for its resistance to corrosion, has been widely explored for harsh environment applications where traditional semiconductor materials fail. In addition, it has tribological characteristics superior to those of

• Si. SiC is a wide bandgap (2.4–3.3 eV) semiconductor with a bulk Young’s modulus of 400–500 GPa [136] and high thermal conductivity on the order of 330 W∙m−1∙K−1 for bulk 3C–SiC [137], a larger than 1 MV cm−1 breakdown electric field as well as a high melting temperature. Regarding its elastic

• properties, despite the relatively large discrepancy in the results, the correlation between the diameter of SiC 1D nanostructures (down to 18 nm) and their Young’s modulus was not found. The Young’s moduli of 18–140 nm diameter SiC nanowires were determined to be in the range of 275–750 GPa [138][139

Numerical investigation of the tribological performance of micro-dimple textured surfaces under hydrodynamic lubrication

• Kangmei Li,
• Dalei Jing,
• Jun Hu,
• Xiaohong Ding and
• Zhenqiang Yao

Beilstein J. Nanotechnol. 2017, 8, 2324–2338, doi:10.3762/bjnano.8.232

• the dimensionless load of a SiC thrust bearing based on the Reynolds equation and compared the results with the experimental results. Rahmani et al. [7] presented a method of integrating the Reynolds equation for partially textured slider bearings to achieve the optimum texturing parameters. In Meng

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• growth of VGNs were reported on carbon-based substrates compared to non-carbon substrates [48]. To substantiate this, we carried out growth of VGNs on a SiC substrate and found that the height of VGNs on SiC is 270 nm after 30 min of growth. The height of VGNs on SiO2 is found to be 216 nm. Therefore

Preparation of thick silica coatings on carbon fibers with fine-structured silica nanotubes induced by a self-assembly process

• Benjamin Baumgärtner,
• Hendrik Möller,
• Thomas Neumann and
• Dirk Volkmer

Beilstein J. Nanotechnol. 2017, 8, 1145–1155, doi:10.3762/bjnano.8.116

• and the possibility to control the ceramic composition. For instance, modification and variation of the alkyl and alkoxy groups of the employed silica precursors allow for controlling the composition of anti-oxidative SiC/SiO2 coatings [6]. The sol–gel method for coating carbon fibers with silicon