Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• the magnetization of the Co1 layer. The layers were deposited using electron beam evaporation (Co, Pb) and AC sputtering (Si3N4). The deposition setup had a load-lock station with vacuum shutters, allowing one to transfer the sample holder without breaking the ultrahigh vacuum in the deposition

• layer to oxygen atmosphere at 100 mbar for two hours. Next, Co1 was deposited in the main deposition chamber at a vacuum pressure of the order of 10−9 mbar on top of the CoOx layer. The I1 layer was formed on the surface of Co1 in a similar way as described above in an oxygen atmosphere of ≈10−2 mbar

• its deposition, thereby, forming an insulating magnetic interlayer at the S/F interface. We consider an oxidation of the Pb layer to be unlikely because it was deposited at a low substrate temperature and exposed to a very low atmospheric pressure for a very short time, as specified above. According

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• ., Delftechpark 37j, 2628 XJ, Delft, Netherlands Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, Netherlands 10.3762/bjnano.15.40 Abstract Structures fabricated using focused electron beam-induced deposition (FEBID) have sloped sidewalls because of the very nature of the deposition process. For

• distance to the electron beam focus. The interaction of the incident and scattered electrons with the substrate and adsorbed precursor layer causes the dissociation of the precursor molecules. This results in either deposition of solid precursor fragments (focused electron beam-induced deposition, FEBID

• precursor used, a point exposure then results in either a Gaussian shaped deposit (FEBID) or in a Gaussian shaped pit (FEBIE), assuming that the deposition/etching process is proportional to the number of available electrons. In addition, it is assumed that the substrate will not be etched by the FEBIE

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• from 300 °C, the first clear signs of diffusion in NWs appeared in the form of splitting at the places where NWs were partly broken during deposition (Figure 3). In addition, fusion at the intersections of two or more NWs (Supporting Information File 1, Figure S1) was observed, in agreement with other

• over several holes etched in a Si substrate. Heating schemes used for heat treatment of Ag NWs. TR stands for room temperature. Δt1 = 10 min is a heat treatment time, Δt2 ≈ 1 h is the rest time. a) Ag NWs deformed after deposition onto a Si substrate. b) Splitting of the Ag NWs at the bending areas

Classification and application of metal-based nanoantioxidants in medicine and healthcare

• Nguyen Nhat Nam,
• Nguyen Khoi Song Tran,
• Tan Tai Nguyen,
• Nguyen Ngoc Trai,
• Nguyen Phuong Thuy,
• Hoang Dang Khoa Do,
• Nhu Hoa Thi Tran and
• Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

• treatments. Recently, Wang et al. developed multifunctional Au/Ag nanodots (Au/AgNDs) as “pilot light” for real-time guided surgery (Figure 5) [170]. The authors proved that Au/AgNDs enhanced the deposition of ionizing radiation energy, increased intracellular ROS generation, and significantly improved

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• transparent strain sensors. So far, the growth of specific grain boundaries in graphene has not been reported. Also, most research activities aim at the chemical vapor deposition (CVD) synthesis of monocrystalline graphene free of grain boundaries [10][11][12]. Methods to detect and visualize grain boundaries

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• to induce that type of energy deposition in the Ge lattice. This way, the defects can be produced and the substrate can be amorphized. The roughness and growth exponents have been deduced from the RMS surface roughness and power spectral density data to understand the mechanism of ripple formation on

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• was patterned to build the top electrode by thermal evaporation at a large deposition rate (>3 Å/s) to ensure quick and continuous film formation and, thus, to efficiently avoid Al to be deposited into the pores. Therefore, only the nanowires the top of which have reached the upper surface of the AAO

• STT-induced features can be interpreted as asynchronous changes of the magnetization direction of different NiCu layers as well as spin accumulation at different interfaces. (a) SEM image after nanowire deposition and surface polishing. The bright dots represent the deposited nanowires the tops of

• magnetic fields. Supporting Information See Supporting Information File 1 for a detailed description of the setups of AAO template preparation and electrolytic nanowire deposition, an estimation of the thickness of NiCu and Cu layers and the current density in the measured device, a detailed description

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• fabricating WOx-based optoelectronic devices, including photovoltaic cells. Keywords: annealing; glancing angle sputter deposition; heterojunction; tungsten oxide; work function; Introduction Tungsten oxide (WOx; x ≤ 3) is a popular transition-metal oxide for various optoelectronic devices because of its

• . In this regard, radio frequency (rf) sputter deposition is one of the preferred choices as an industry-compatible method to grow WOx thin films [2][19][20][21]. Apart from thin films, nanostructured metal oxides generally possess superior electrochemical properties compared to their bulk counterparts

• . In this respect, the use of glancing angle deposition (GLAD) to produce high-aspect-ratio nanostructures has certain advantages in terms of a wide range of structural possibilities (such as screws and helical or columnar structures) and reduced complexity (no templates involved) [26]. In addition

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.e., well below the laser spot size), with possibly a distribution of thicknesses and twist angles between stacked layers. As an essential preliminary, we

• first reassess the applicability of different Raman criteria to determine the thicknesses (or layer number, N) of MoS2 flakes from measurements performed on reference samples, namely well-characterized mechanically exfoliated or standard chemical vapor deposition MoS2 large flakes deposited on 90 ± 6 nm

• , where atomic layers are arranged in such way that the stacking between two adjacent layers corresponds to a twist angle of θ = 60°, and any Mo atom is sitting on top of two S atoms of the adjacent layers [18][19]. However, during the synthesis process (e.g., chemical vapor deposition (CVD) synthesis) or

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• substrate via sputter deposition. The metal thin film is then pre-stretched to generate microcracks. The sensor demonstrates a remarkable stretchability of 300%, an exceptional sensitivity with a maximum gauge factor reaching 107, a rapid response time of 158 ms, minimal hysteresis, and outstanding

• successfully retrieved by peeling it off from the screw. In order to eliminate the contaminants from the surface of the helically structured PDMS, a 10 min ultrasound treatment in absolute alcohol was employed, followed by drying in a sterile oven. Prior to the Au deposition, the outer surface of the helically

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• -induced deposition of platinum. Finally, we present measurements that characterize the spread of mechanical resonant frequency, the temperature dependence of the microwave resonance, and the sensor’s operation as an electromechanical transducer of force. Keywords: atomic force microscopy; force sensing

• niobium and titanium targets [33] in an ATC2200 from AJA International Inc., with a deposition rate of roughly 3 nm/min. (b) Pads and markers. A lift-off process defines the gold contact pads and alignment marks. We spin a 400 nm thick photoresist (maN1407), bake on a hotplate at 100 °C for 60 s and

• adhesion of the following 150 nm deposition of chromium with electron-beam evaporation in the Auto306 from Edwards. After the lift-off in mrREM700, we also strip the protective PMMA layer on the front side with AR600–71, and we clean the wafer in isopropanol (IPA). (d) Coarse circuit pattern. A layer of

Multiscale modelling of biomolecular corona formation on metallic surfaces

• Parinaz Mosaddeghi Amini,
• Ian Rouse,
• Julia Subbotina and
• Vladimir Lobaskin

Beilstein J. Nanotechnol. 2024, 15, 215–229, doi:10.3762/bjnano.15.21

• provide valuable insights into the mechanisms of lactose and protein deposition on aluminum surfaces, which can aid in the general understanding of protein corona formation. Keywords: all atomistic; aluminum; bionano interface; coarse grained model; lactose; milk protein; multiscale modelling; protein

• the process of protein deposition on metallic surfaces. Finally, the key insights gained from this study are summarized, highlighting the implications and potential applications of the findings. Results and Discussion Here, we aim to predict the content of a biomolecular corona on a metallic aluminum

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• origami could be therefore designed in a way that a specific segment of the origami is modified/lifted upon stochastic energy deposition or radical attack, resulting in uniform modifications of the nanostructures. AFM images of DNA origami nanotriangles on Si irradiated with increasing fluences of 56Fe10

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• as an unwanted co-deposition of amorphous carbon. Those deposition and etching processes may co-exist and can be controlled to a certain level by the electron flux [23]. The influence of surface kinetics phenomena on the etch profiles has not been considered in the previous works describing the proof

• [17]. The central protrusion in the etch profiles is observed in ex situ AFM profiles at high doses in case of singular lines and large triangular patterns. Its origin is unlikely due to amorphous carbon co-deposition from the residual vapor impurities. Such transition from the deposition (FEBID) of

• deposited should be etched away with water. The parameters used in our experiments are even further from the switching point. Therefore, the protrusions in the middle of the line profiles, visible in Figure 3 for doses D3–D5, are unlikely due to the deposition of hydrocarbons. The nanostructurizing process

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• of templates, including evaporation masks [8][9][10], molds for nanowire array production using the supercritical fluid method [11], electrochemical deposition [12], atomic layer deposition [13], or traps for colloidal nanoparticle assembly [14]. Several applications, for example, color filtering [15

New application of bimetallic Ag/Pt nanoplates in a colorimetric biosensor for specific detection of E. coli in water

• Azam Bagheri Pebdeni,
• Mohammad N. AL-Baiati and
• Morteza Hosseini

Beilstein J. Nanotechnol. 2024, 15, 95–103, doi:10.3762/bjnano.15.9

• penetration through the bottom of the sheets (similarly to reference [12]). To conduct the analysis, 3 µL of aptamer-NPL was dropped on the paper in the first stage, and after drying, this procedure was repeated two more times to get a total amount of 9 µL of aptamer-NPL on each deposition zone. Following

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• -frequency receiving system prototype for the LSPE mission) is shown in Figure 3a, and a photograph from an optical microscope is shown in Figure 3b. The shadow evaporation of the bolometric layer consists of the following stages: The first stage is the vertical deposition of a normal metal layer, consisting

• stage is the deposition of about 70 nm of Al at an angle of −45° to form a SIN tunnel junction. Thus, as a normal layer we use the hybrid superconducting/ferromagnetic structure, which allows for decreasing the absorber volume and also for suppressing the Andreev heating current [22] to improve detector

• process. In the future, it is planned to carry out a set of works to improve the barrier properties of aluminum oxide. The quality of the barrier largely depends on the roughness of aluminum. It can be critically large during electron beam deposition, which in turn affects the thickness of the barrier and

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• membrane also allows for high-resolution patterning since there is less electron scattering during exposure [26]. The purpose of applying two layers of resist is to create a large undercut by using a bottom layer that is more sensitive than the top layer. This prevents the unwanted deposition of metal that

• techniques, a one-time exposure is possible with the help of high accelerating voltage during electron beam exposure. In this process, rather than doing one resist deposition and exposure after another, the layer selectivity is controlled by the electron beam dose and the sensitivity of the two layers. Only

• establish a good thermal contact during metal deposition to prevent the resist mask from melting as the substrate temperature is above the glass transition temperature of the resist. Ion beam etching The IBE process (Figure 6) is as follows: The first step is to deposit Py on the substrate; then a negative

Fluorescent bioinspired albumin/polydopamine nanoparticles and their interactions with Escherichia coli cells

• Eloïse Equy,
• Jordana Hirtzel,
• Sophie Hellé,
• Béatrice Heurtault,
• Eric Mathieu,
• Morgane Rabineau,
• Vincent Ball and
• Lydie Ploux

Beilstein J. Nanotechnol. 2023, 14, 1208–1224, doi:10.3762/bjnano.14.100

• mixtures of BSA and DA in Tris buffer inhibited the deposition of a PDA film on the wall of the reaction beakers (Figure 3a). This suggested that BSA/PDA aggregates formed and that almost all the free DA molecules were consumed in these aggregates, as already mentioned by Bergtold and co-workers [13]. A

• ambient temperature, as shown by the good dispersion and the absence of precipitates and deposition on the container wall (Figure 3c). Good stability and dispersion were maintained after dialysis with a 100 kDa cut-off membrane, which allowed for the removal of free BSA molecules. As shown by Chassepot

• progressive inhibition of the deposition of a PDA film on the wall of the reaction beaker, which was mentioned above and observed above a certain amount of BSA (Figure 3a). This allowed us to assume that BSA molecules below a critical amount cannot surround all DA molecules (some DA molecules thus form a thin

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• Iceland, Dunhagi 3, 107 Reykjavík, Iceland Inorganic and Organometallic Chemistry, Universität Erlangen-Nürnberg, 91058 Erlangen, Germany Carl Zeiss SMT GmbH, 64380 Roßdorf, Germany 10.3762/bjnano.14.98 Abstract Motivated by the potential of focused-electron-beam-induced deposition (FEBID) in the

• that we attribute to electron-induced secondary and tertiary reactions in the deposition process. We find this precursor to be stable at ambient conditions and to have sufficient vapor pressure to be suitable for use in HV instruments. More importantly, in the UHV setup, FEBID with [Au(CH3)2Cl]2

• yielded deposits with high gold content, ranging from 45 to 61 atom % depending on the beam current and on the cleanliness of the substrates surface. Keywords: dissociative electron attachment; dissociative ionization; focused-electron-beam-induced deposition (FEBID); gold deposit; low-energy electrons

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• deposition can be made. Overall, five areas were investigated on Au/mica and three for Au/Si, which all showed consistent images. Dodecanethiol SAMs on Au/mica Figure 3 shows images of the DDT-covered Au/mica surface obtained after the deposition procedure described above. In total, four different areas on

• . All these indications lead to the conclusion that ordered DDT SAMs form on the surface with the chosen deposition technique. More importantly, the current maps in Figure 3 show that substrate and measurement technique are suitable for obtaining information on the conductivity of a molecular SAM, as

• variation in the current is governed by the structure of the substrate, which remains qualitatively unchanged by the deposition of the SAM. For the Au/Si substrate, the rough topography yields only small areas on the surface on which comparable conductive properties can be expected. Without information on

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• standard photolithography, using a mask aligner (MA6, Karl Suss, Germany), and conventional deposition techniques. Following a resist (about 1 µm thick) development process, a 2 inch diameter wafer was placed in a vacuum chamber for electron beam deposition of a 200 nm thick titanium/gold layer

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. Keywords: atomic layer deposition; tin oxide; tin tetraiodide; Introduction Atomic layer-deposited SnO2 films

• precursor combinations for obtaining SnO2 in atomic layer deposition (ALD) processes [9]. Two of these processes have employed SnI4 as the metal precursor with either O2 [10][11][12][13][14] or H2O2 [10][11][15] as oxidizer. Of these two oxygen sources, O2 would be more desirable because with it a hydrogen

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• × 2.8) and (1.4 × 1.2) mm2 labeled as A, B, C, and D, respectively. In the process of fabrication, a 100 nm thick layer of LNO as the bottom electrode was first deposited, using pulsed laser deposition (PLD) technique, on a single crystal silicon wafer. Then, an 850 nm lead barium zirconia titanate

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• diagnostic tools. Based on the photothermal principle, very recently, Shirshahi et al. developed LFA strips for the detection of E. coli O157:H7 strains of bacteria. They used reduced graphene oxide as both tracer and photothermal signal amplification material. After the deposition of rGO on the test line