Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• dynamics is indeed the effective mobility of holes and electrons (under the effect of drift diffusion) in the donor and acceptor networks. After the application of a light pulse – and during the duration of the pulse – the charge mobility limits the rate at which an electrostatic equilibrium can be reached

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• KELSCAN [13], which evaluates the contact potential and surface photovoltage as a function of the position. The Silvaco ATLAS model solves the Poisson equation self-consistently coupled to carrier continuity and transport equations in the well-known drift diffusion model, which is given detail in [22] and

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• global electrostatic landscape probed by KPFM in the dark state [20]. The photocharging dynamics can be understood as follows. After exciton splitting and dissociation of the charge transfer states at the D–A interfaces, the photogenerated carriers experience a drift-diffusion limited by the carrier

• optical power. At the lowest fluence applied (Popt = 2.4 mW∙cm−2), the photocharging time even exceeds the pulse duration within the second sequence (Figure 6f). The physics of the photocharging dynamics are based on a drift-diffusion process limited by the carrier mobility. Hence, our data (Figure 6

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• modified drift–diffusion model, which includes other effects related to the short-channel nature of the investigated transistor and to quantum effects is used. Further, the gradient density model is also included, which consists of the quantum correction associated with the local potential to the carrier

Tandem polymer solar cells: simulation and optimization through a multiscale scheme

• Fanan Wei,
• Ligang Yao,
• Fei Lan,
• Guangyong Li and
• Lianqing Liu

Beilstein J. Nanotechnol. 2017, 8, 123–133, doi:10.3762/bjnano.8.13

• mobility and recombination rate were inputs into the device scale simulation module [25] and J–V curves of each single sub-cell were acquired through solving drift–diffusion equations. Device scale simulation was performed for both sub-cells separately. The critical parameters used in the device scale

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• different, the applicability of a Shockley-like equation is far from obvious. In contrast to inorganic p–n junctions, where the current across the junction is due to drift diffusion and/or recombination within the SCR, the current in organic heterojunctions is carried by hole and electron-type polarons

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

• of current–voltage curves, current–voltage curves are simulated for different concentrations of traps using a drift–diffusion solver, and then analytical equations are fitted to the simulated curves to compare the apparent mobility and density of states derived from the fit to the ones that were used

• as input for the drift–diffusion simulation. The results of the simulations show that using analytical equations in electron-only devices with substantial concentrations of negatively charged defects can result in strongly underestimated mobilities and overestimated width of the exponentially