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Search for "gallium arsenide (GaAs)" in Full Text gives 2 result(s) in Beilstein Journal of Nanotechnology.

Advancing nanolithography: a comprehensive review of materials for local anodic oxidation with AFM

Beilstein J. Nanotechnol. 2026, 17, 275–291, doi:10.3762/bjnano.17.19

][31], gallium arsenide (GaAs) [32][33] and silicon carbide (SiC) [34], meaning that SPL has still the potential to revolutionize nanolithography. In the context of 2D materials, LAO facilitates the fabrication of intricate structures such as nanoribbons and transistors, granting proper operation of

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Review

Published 09 Feb 2026

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. Keywords: anodization; crystallographically oriented pores; gallium arsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction

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Full Research Paper

Published 29 Jun 2020

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