High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• metal-oxide semiconductor capacitors on Si(100) substrates, the lifetimes τn and τp as functions of the sum of the surface potential and the Fermi potential with respect to the midgap have been experimentally investigated [24]. As a result, for Si semiconductors with a low carrier density (small Fermi

Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• complementary metal oxide semiconductor (CMOS) processes [13][14]. It has been shown that the HCG system can support the optical bound states in the continuum (BICs) [15][16][17][18]. BIC plays an important role in determining the characteristics of the radiative high-Q resonance [17]. However, there are fewer

Spindle-like MIL101(Fe) decorated with Bi₂O₃ nanoparticles for enhanced degradation of chlortetracycline under visible-light irradiation

• Chen-chen Hao,
• Fang-yan Chen,
• Kun Bian,
• Yu-bin Tang and
• Wei-long Shi

Beilstein J. Nanotechnol. 2022, 13, 1038–1050, doi:10.3762/bjnano.13.91

• be improved by combining it with other suitable semiconductor materials to construct Z-scheme heterojunctions. Bismuth trioxide (Bi2O3), a metal oxide semiconductor with a bandgap of 2.8 eV, can be excited by visible light [43][44]. However, pure Bi2O3 exhibits poor photocatalytic activity due to the

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• three-dimensional metal oxide semiconductor field-effect transistors (MOSFETs) [1]. Here, formation processes of ultrathin SiO2 at the interface are considered to be quite important in determining its dielectric properties. To study procedures to fabricate gate dielectrics, it will be necessary to

Nanogenerator-based self-powered sensors for data collection

• Yicheng Shao,
• Maoliang Shen,
• Yuankai Zhou,
• Xin Cui,
• Lijie Li and
• Yan Zhang

Beilstein J. Nanotechnol. 2021, 12, 680–693, doi:10.3762/bjnano.12.54

• largely influenced by the surface carrier density on the surface of the nanowires. The adsorption of gas molecules can change the surface carrier density by the shielding effect, so the output of the sensor is very sensitive to the gas concentration. Compared with traditional metal oxide semiconductor

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• , and greater stability than pure WO3 [20]. WO3 decorated with palladium nanoparticles on the surface can be used as an improved and reusable gas sensor for NH3 [21]. Metal oxide semiconductor junctions can either be formed between two p-type MOS or two n-type MOS (p–p/n–n homojunctions) or between a p

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• , determined by our analytic procedure [32], as a function of VDC for both n- and p-type semiconductor materials. Using the complete metal–oxide–semiconductor equations, the Poisson–Boltzmann equation is solved for various active dopant concentration values ranging from 1015 to 1019 atoms·cm−3. In the sMIM

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• high-performance metal–oxide–semiconductor field-effect transistors (p-MOSFETs) [1][2] because the hole mobility of Si(110) is twice that of the other Si planes [3]. For surface science research, Si(110) has been used as a template substrate for self-assembled nanowires [4][5][6], nanomeshes [7], and

High dynamic resistance elements based on a Josephson junction array

• Konstantin Yu. Arutyunov and
• Janne S. Lehtinen

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

• is compared to values of ≈100 MW for conventional semiconductor complementary metal–oxide-semiconductor (CMOS) technology. In addition to heat dissipation, another issue is the speed of processing. It has been shown that the operational frequency of superconducting logic can be at least 100 times

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• ; nanosecond operation; resistive switching; silver iodide (AgI); Introduction The half a century long increase of the computational capacity of von Neumann architectures built on ever-shrinking complementary metal-oxide semiconductor (CMOS)-based hardware units is facing its technological, economical and

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• platform for the integration of these quantum systems in large-scale complementary metal-oxide semiconductor (CMOS)-compatible wafers. Also, SiC is suitable for nanofabrication [18][19], and can be controlled through its electronic and piezoelectric properties. Further, it has great potentials for

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

Selective gas detection using Mn₃O₄/WO₃ composites as a sensing layer

• Yongjiao Sun,
• Zhichao Yu,
• Wenda Wang,
• Pengwei Li,
• Gang Li,
• Wendong Zhang,
• Lin Chen,
• Serge Zhuivkov and
• Jie Hu

Beilstein J. Nanotechnol. 2019, 10, 1423–1433, doi:10.3762/bjnano.10.140

• shown in Figure 10, for the convenience of comparison, all the response values are normalized. It can be clearly seen that H2S, NH3 and CO are the most sensitive at 90 °C, 150 °C and 210 °C, respectively, whereas the responses were much lower for other gases. The selectivity of the metal oxide

• semiconductor sensor is complicated. It is influenced by many factors including their structure, working temperature, bond dissociation energy of gas molecules, and so forth [30]. In this work, the working temperature is considered as the main factor that affects the selectivity of our sensor. Figure 11

Experimental study of an evanescent-field biosensor based on 1D photonic bandgap structures

• Jad Sabek,
• Francisco Javier Díaz-Fernández,
• Luis Torrijos-Morán,
• Zeneida Díaz-Betancor,
• Ángel Maquieira,
• María-José Bañuls,
• Elena Pinilla-Cienfuegos and
• Jaime García-Rupérez

Beilstein J. Nanotechnol. 2019, 10, 967–974, doi:10.3762/bjnano.10.97

• , due to the various advantages it provides, e.g., high sensitivity, miniaturization, high multiplexing level, fast response, need for very low sample and reagent volumes and the compatibility to complementary metal-oxide semiconductor (CMOS) fabrication [3]. Chip-integrated photonic biosensors have

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• ; growth kinetics; nanocrystals; nucleation; twinning; zinc oxide; Introduction Metal oxide semiconductor nanostructures are quite interesting not only in terms of the basic growth mechanism involved in their fabrication, but also due to the large number of applications based on them in the field of

• nanoscale optoelectronics [1][2][3][4]. ZnO is an important direct band gap (≈3.3 eV), nontoxic, metal oxide semiconductor, which can readily be used for optoelectronic applications. The properties of ZnO can be tailored by changing the morphology of the structures. Thus, fabrication of ZnO having different

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• -oxide-semiconductor (CMOS) technology and thus have yet to be integrated into a cost-efficient Si-based technology. Multiple methods have been proposed and optimized for Si NC fabrication, including plasma-enhanced chemical vapor deposition (PECVD) [4][10], magnetron sputtering [11][12], laser-induced

• particular, various groups have demonstrated the usage of a Si NC embedded in an SiO2 matrix as a Coulomb island for a single electron transistor (SET) device [7][8][9]. However, so far Si NC-based SET devices lack either the ability of room-temperature operation or the compatibility to complimentary metal

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• metal oxides, is proposed. In detail, the enhanced sensing performance is accounted for by chemical bonds between graphene and metal oxides. Many XPS studies have claimed that there indeed exist chemical bonds between metal oxides and graphene. WO3, a transition-metal oxide semiconductor is widely used

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• being deemed detrimental to current and future device production. Semiconductor substrates require doping to reduce their resistivity and enable their use in electronic devices such as metal-oxide semiconductor field-effect transistors (MOSFETs). Traditionally, ex situ doping was carried out using ion

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• the electron acceptor materials commonly used for DSSC and HBHJ, titanium dioxide (TiO2) is a well-known metal oxide semiconductor [6][7][8]. Depending on its nanostructure and its crystalline phase, its conductivity varies from 10−4 Ω−1·cm−1 to 10−11 Ω−1·cm−1 [9][10]. TiO2 is very valuable because it

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• (RF) data transmission between distant nodes is emerging as an alternative for wired physical waveguiding channels [4]. This approach is enabled by the availability of complementary metal-oxide semiconductor (CMOS)-compatible transceivers [5] and may offer cost-effective robust interconnects operating

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• -effect transistor (JL TFET); nanoscale; SiGe; Introduction In the last years, the continuous miniaturization of nanoscale transistors induces new challenges including short-channel effects (SCEs) and high power consumption, which prevent incorporating conventional metal-oxide semiconductor field-effect

Surface-plasmon-enhanced ultraviolet emission of Au-decorated ZnO structures for gas sensing and photocatalytic devices

• T. Anh Thu Do,
• Truong Giang Ho,
• Thu Hoai Bui,
• Quang Ngan Pham,
• Hong Thai Giang,
• Thi Thu Do,
• Duc Van Nguyen and
• Dai Lam Tran

Beilstein J. Nanotechnol. 2018, 9, 771–779, doi:10.3762/bjnano.9.70

• precursors is higher, resulting in the core-spike architecture by minimizing the surface energy. It was found that the plasmonic metal nanomaterial/metal-oxide semiconductor structures were preferred as the nanometer-sized metal oxides for high photocatalytic activity and wide dispersion. However, in this

• investigated for photocatalytic activity as reported previously [8][20]. The photocatalytic activity of the Pt/ZnO hybrid nanocomposite under photodegradation of rhodamine B (RhB) was higher compared to commercial TiO2 [21]. Here, it is quite reasonable to note that the plasmonic metal NP/metal-oxide

• semiconductor structures are also promising and interesting materials for photocatalytic utilization, in particular relating to the solar light spectrum. It is also worth mentioning that, in fact, there are numerous works that have investigated the photocatalytic activity of these structures based on

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• possibility to tune the Young’s modulus by changing an element size combined with facile integration with existing complementary metal oxide semiconductor (CMOS) devices, make metals attractive candidates for the use in NEM switches. However, metal-based NEM components with nanometre-scale dimensions are

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

• computing to be extraordinarily difficult, even if foreseeable advances in complementary metal-oxide-semiconductor (CMOS) technology are taken into account [10]. Low energy efficiency leads to high power consumption and also limits the clock frequency to 4–5 GHz. This frequency limit occurs due to