Cite the Following Article
Copper atomic-scale transistors
Fangqing Xie, Maryna N. Kavalenka, Moritz Röger, Daniel Albrecht, Hendrik Hölscher, Jürgen Leuthold and Thomas Schimmel
Beilstein J. Nanotechnol. 2017, 8, 530–538.
https://doi.org/10.3762/bjnano.8.57
How to Cite
Xie, F.; Kavalenka, M. N.; Röger, M.; Albrecht, D.; Hölscher, H.; Leuthold, J.; Schimmel, T. Beilstein J. Nanotechnol. 2017, 8, 530–538. doi:10.3762/bjnano.8.57
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Citations to This Article
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Scholarly Works
- Xie, F. Atomic electronics. Encyclopedia of Nanomaterials; Elsevier, 2023; pp 694–712. doi:10.1016/b978-0-12-822425-0.00108-1
- Xie, F.; Ducry, F.; Luisier, M.; Leuthold, J.; Schimmel, T. Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt. Advanced Electronic Materials 2022, 8. doi:10.1002/aelm.202200225
- Kamarchuk, G. V.; Pospelov, А. P.; Kamarchuk, L. V.; Savytskyi, A.; Harbuz, D. A.; Vakula, V. L. Point-Contact Sensors as an Innovative Tool in Defense Against Chemical Agents, Environment and Health Risks: A Review. Functional Nanostructures and Sensors for CBRN Defence and Environmental Safety and Security; Springer Netherlands, 2020; pp 245–270. doi:10.1007/978-94-024-1909-2_18
- Xie, W.; Fang, F. Effect of tool edge radius on material removal mechanism in atomic and close-to-atomic scale cutting. Applied Surface Science 2020, 504, 144451. doi:10.1016/j.apsusc.2019.144451
- Pragnya, P.; Pinkowitz, A.; Hull, R.; Gall, D. Electrochemical memristive devices based on submonolayer metal deposition. APL Materials 2019, 7, 101121. doi:10.1063/1.5110889
- Zheng, P. Study of the Electrochemical Preparation of Atom-Scale Iron Quantum Wire Controlled by an External Resistor. International Journal of Electrochemical Science 2018, 13, 7571–7577. doi:10.20964/2018.08.33
- Xie, F.; Peukert, A.; Bender, T.; Obermair, C.; Wertz, F.; Schmieder, P.; Schimmel, T. Quasi‐Solid‐State Single‐Atom Transistors. Advanced materials (Deerfield Beach, Fla.) 2018, 30, 1801225. doi:10.1002/adma.201801225
- Staiger, T.; Wertz, F.; Xie, F.; Heinze, M.; Schmieder, P.; Lutzweiler, C.; Schimmel, T. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact. Nanotechnology 2017, 29, 025202. doi:10.1088/1361-6528/aa9cc3
- Xie, F.; Lin, X.; Gross, A.; Evers, F.; Pauly, F.; Schimmel, T. Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor. Physical Review B 2017, 95, 195415. doi:10.1103/physrevb.95.195415
Patents
- XIE FANGQING; SCHIMMEL THOMAS. FULLY METALLIC ATOMIC-SCALE TIN TRANSISTORS WITH ULTRALOW POWER DISSIPATION. WO 2023131586 A1, July 13, 2023.
- XIE FANGQING; SCHIMMEL THOMAS. FULLY METALLIC ATOMIC-SCALE TIN TRANSISTORS WITH ULTRALOW POWER DISSIPATION. EP 4210112 A1, July 12, 2023.
- TODOROV TEODOR K; BISHOP DOUGLAS M; TANG JIANSHI; ROZEN JOHN. Neuromorphic device driven by copper ion intercalation. US 11455521 B2, Sept 27, 2022.
- TODOROV TEODOR K; ANDO TAKASHI; NARAYANAN VIJAY; ROZEN JOHN. Three-terminal copper-driven neuromorphic device. US 10957937 B2, March 23, 2021.
