1 article(s) from Burk, Sina
Formation and quenching of NV centres. (a) PL-intensity mapping performed on the diamond surface wh...
Jump to Figure 1
In-plane Schottky diode from diamond. (a) Schematic figure of an in-plane Al Schottky diode on an H...
Jump to Figure 2
Active charge state control of a single NV centre. At zero bias there is only a PL-background of th...
Jump to Figure 3
Schematic setup for time-resolved measurement of NV-intensity. To record the time evolution of the ...
Jump to Figure 4
Fast charge state switching. The result of the time-resolved NV-intensity measurement shows that sw...
Jump to Figure 5
Time constant for charge state switching. Time constants deduced from fitting an exponential functi...
Jump to Figure 6
Degradation effect. After several 1000 switching cycles, the measured time constants for dischargin...
Jump to Figure 7
Simultaneous measurement of NV− and NV0 intensity. A time-resolved measurement of NV− (red curve) a...
Jump to Figure 8
Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165
Subscribe to our Latest Articles RSS Feed.
Register and get informed about new articles.
Follow the Beilstein-Institut