1 article(s) from Ferhati, Hichem
Schematic of the investigated DG-HJ-JL TFET with Nd = 1·1019 cm−3 and tox = 3 nm.
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Drain current as a function of the applied gate voltage for the DG-HJ-JL TFET proposed with differe...
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(a) Transfer characteristics of the proposed Si1−xGex/Si/Ge DG-HJ-JL TFET as a function of the Ge c...
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(a) Subthreshold swing factor and the ION/IOFF ratio as functions of the Ge mole fraction for the i...
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Subthreshold swing factor as a function of the channel length for both the proposed Si1−xGex/Si/Ge ...
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Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177
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