1 article(s) from Friedli, Vinzenz
Figure 1: Steady state vertical growth rate of a deposit plotted as a function of electron flux. The linear r...
Figure 2: Potential energy diagram for adsorption governed by a single potential well at the surface. Modifie...
Figure 3: Adsorbate concentration (Na) versus time in the absence of electron irradiation (here, Na = 0 at t ...
Figure 4: Gaussian electron flux profile (Ω = 10 nm) and two tophat flux profiles with a radius of 250 nm (β ...
Figure 5: Molecule flow regimes for two flow rates Q of H2 and H2O. Note that 1 sccm = 4.48 × 1017 molecules/...
Figure 6: Illustration of the two capillary nozzle geometries implemented in the GIS simulator. Left: straigh...
Figure 7: Precursor flux distributions at the substrate under molecular flow conditions for conical nozzles w...
Figure 8: Steady state growth rate versus r calculated at a number of substrate temperatures using Equation 15 and a Gau...
Figure 9: First FEBIP resolution scaling law for Gaussian and tophat electron beams.
Figure 10: Illustration of two adsorbate FEBIP where the molecules are supplied by two capillaries and impinge...
Figure 11: (a) Adsorbate concentrations Ne and Nd versus time, calculated in the absence of electron irradiati...
Figure 12: Potential energy diagram for the case of chemisorption governed by a potential well of depth Ec and...
Figure 13:
(a) Steady state concentrations of physisorbed and chemisorbed
adsorbates versus pressure, calcul...
Figure 14: Steady-state vertical growth rate versus substrate temperature for a precursor that undergoes activ...
Figure 15: Flowchart showing how F radicals (represented by α) generated by electron induced dissociation of NF...
Figure 16: (a) Etch rate of Si calculated using Equation 61 as a function of electron flux f. (b,c) Corresponding steady ...
Figure 17: Calculated changes in dissociation yields YA and YB (per primary electron as defined in Equation 66 and Equation 67) and ...
Figure 18: Deposit geometries analogous to those shown in Figure 11b, simulated using Equation 70 and Equation 71, a Gaussian electron-beam pr...
Figure 19: FEBID growth rates simulated using Equation 75 and Equation 76, a Gaussian electron-beam profile (Ω = 5 nm) and substrate...
Figure 20: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
Figure 21: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...