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1 article(s) from Friedli, Vinzenz

Continuum models of focused electron beam induced processing

Milos Toth,
Charlene Lobo,
Vinzenz Friedli,
Aleksandra Szkudlarek and
Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1518–1540, doi:10.3762/bjnano.6.157

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Figure 1: Steady state vertical growth rate of a deposit plotted as a function of electron flux. The linear r...

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Figure 2: Potential energy diagram for adsorption governed by a single potential well at the surface. Modifie...

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Figure 3: Adsorbate concentration (N_a) versus time in the absence of electron irradiation (here, N_a = 0 at t ...

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Figure 4: Gaussian electron flux profile (Ω = 10 nm) and two tophat flux profiles with a radius of 250 nm (β ...

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Figure 5: Molecule flow regimes for two flow rates Q of H₂ and H₂O. Note that 1 sccm = 4.48 × 10¹⁷ molecules/...

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Figure 6: Illustration of the two capillary nozzle geometries implemented in the GIS simulator. Left: straigh...

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Figure 7: Precursor flux distributions at the substrate under molecular flow conditions for conical nozzles w...

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Figure 8: Steady state growth rate versus r calculated at a number of substrate temperatures using Equation 15 and a Gau...

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Figure 9: First FEBIP resolution scaling law for Gaussian and tophat electron beams.

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Figure 10: Illustration of two adsorbate FEBIP where the molecules are supplied by two capillaries and impinge...

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Figure 11: (a) Adsorbate concentrations N_e and N_d versus time, calculated in the absence of electron irradiati...

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Figure 12: Potential energy diagram for the case of chemisorption governed by a potential well of depth E_c and...

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Figure 13: (a) Steady state concentrations of physisorbed [Graphic 37] and chemisorbed [Graphic 38] adsorbates versus pressure, calcul...

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Figure 14: Steady-state vertical growth rate versus substrate temperature for a precursor that undergoes activ...

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Figure 15: Flowchart showing how F radicals (represented by α) generated by electron induced dissociation of NF...

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Figure 16: (a) Etch rate of Si calculated using Equation 61 as a function of electron flux f. (b,c) Corresponding steady ...

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Figure 17: Calculated changes in dissociation yields Y_A and Y_B (per primary electron as defined in Equation 66 and Equation 67) and ...

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Figure 18: Deposit geometries analogous to those shown in Figure 11b, simulated using Equation 70 and Equation 71, a Gaussian electron-beam pr...

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Figure 19: FEBID growth rates simulated using Equation 75 and Equation 76, a Gaussian electron-beam profile (Ω = 5 nm) and substrate...

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Figure 20: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...

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Figure 21: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...

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Review

Published 14 Jul 2015

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