1 article(s) from Friedli, Vinzenz
- Review
- Published 14 Jul 2015
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Figure 1: Steady state vertical growth rate of a deposit plotted as a function of electron flux. The linear r...
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Figure 2: Potential energy diagram for adsorption governed by a single potential well at the surface. Modifie...
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Figure 3: Adsorbate concentration (Na) versus time in the absence of electron irradiation (here, Na = 0 at t ...
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Figure 4: Gaussian electron flux profile (Ω = 10 nm) and two tophat flux profiles with a radius of 250 nm (β ...
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Figure 5: Molecule flow regimes for two flow rates Q of H2 and H2O. Note that 1 sccm = 4.48 × 1017 molecules/...
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Figure 6: Illustration of the two capillary nozzle geometries implemented in the GIS simulator. Left: straigh...
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Figure 7: Precursor flux distributions at the substrate under molecular flow conditions for conical nozzles w...
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Figure 8: Steady state growth rate versus r calculated at a number of substrate temperatures using Equation 15 and a Gau...
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Figure 9: First FEBIP resolution scaling law for Gaussian and tophat electron beams.
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Figure 10: Illustration of two adsorbate FEBIP where the molecules are supplied by two capillaries and impinge...
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Figure 11: (a) Adsorbate concentrations Ne and Nd versus time, calculated in the absence of electron irradiati...
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Figure 12: Potential energy diagram for the case of chemisorption governed by a potential well of depth Ec and...
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Figure 13: (a) Steady state concentrations of physisorbed
![[Graphic 37]](/bjnano/content/inline/2190-4286-6-157-i117.png?max-width=637&scale=1.18182)
and chemisorbed ![[Graphic 38]](/bjnano/content/inline/2190-4286-6-157-i118.png?max-width=637&scale=1.18182)
adsorbates versus pressure, calcul...
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Figure 14: Steady-state vertical growth rate versus substrate temperature for a precursor that undergoes activ...
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Figure 15: Flowchart showing how F radicals (represented by α) generated by electron induced dissociation of NF...
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Figure 16: (a) Etch rate of Si calculated using Equation 61 as a function of electron flux f. (b,c) Corresponding steady ...
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Figure 17: Calculated changes in dissociation yields YA and YB (per primary electron as defined in Equation 66 and Equation 67) and ...
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Figure 18: Deposit geometries analogous to those shown in Figure 11b, simulated using Equation 70 and Equation 71, a Gaussian electron-beam pr...
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Figure 19: FEBID growth rates simulated using Equation 75 and Equation 76, a Gaussian electron-beam profile (Ω = 5 nm) and substrate...
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Figure 20: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
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Figure 21: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
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