1 article(s) from Habler, Gerlinde
(a) SEM and (b) AFM images of MoS2 thin films (≈100 nm) deposited at RT and 400 °C. (c) Ex situ Ram...
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XRR pattern of MoS2 thin films (≈10 nm) deposited at RT and 400 °C. X-ray wavelength λ = 0.1518 nm.
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(a) Specular XRD patterns of MoS2 films (≈10 nm) deposited at RT and 400 °C. (b,c) GIXD images of M...
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(a) In situ laser annealing Raman spectra of MoS2 thin films, deposited at RT (bottom panel) and 40...
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Drain–source currents measured versus the (a) drain–source and the (b) gate-voltage for a 10 nm MoS2...
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Electrochemical HER measurements on our PVD MoS2 films directly on SiO2 covered Si substrates.
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Current generated per area of the uncoated and coated electrodes over time. The currents have been ...
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Average current density generated per uncoated and coated electrodes during the 2 h experiments. Th...
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Average hydroxide (OH–) moles produced during the 2 h experiments.
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Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113
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