1 article(s) from Knoch, Joachim
Energy offsets with SiO2- and Si3N4-embedding for one Si10-NC (0.8 nm size) embedded in SiO2 and th...
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Evolution of energy offsets for SiO2- and Si3N4-embedded Si10-NCs (0.8 nm size) as a function of em...
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Structures of samples investigated by synchrotron UPS: (a) Si-reference, (b) 1.7 nm Si-NWell in Si3N...
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Cross-section HR-TEM images of samples QW-17-N (a), QW-17-O (b) and QW-26-N (c). Semi-transparent s...
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Experimental evidence of HOMO ΔE by synchrotron UPS: (a) scans of NWell samples and a hydrogen-term...
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Electronic properties obtained by h-DFT for Si233(NH2)87(OH)81 NWire of 1.4 nm diameter and 5.2 nm ...
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Concept of an undoped FET consisting of a Si-NWire with drain/gate (channel)/source regions covered...
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NEGF simulation results of undoped Si-NWire-FET illustrated in Figure 7: (a) gate-wrap-around Si-NWire FET ...
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Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210
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