2 article(s) from Wang, Dapeng
Transfer characteristics of the devices annealed at different temperatures.
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Transfer curves scanned in the forward direction for a-IGZO TFTs annealed at (a) 300 °C, (b) 350 °C...
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Transfer characteristics in the forward measurement for the devices annealed at (a) 300 °C, (b) 350...
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Figure 4 Transfer curves of IGZO TFTs annealed at (a) 300 °C, (b) 350 °C, and (c) 400 °C before and after 10...
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Possible degradation mechanisms of NBIS-induced instability in the devices annealed at (a) 300, (b)...
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Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112
(a) Schematic cross-sectional view and (b) the initial transfer characteristics of a-IGZO TFTs with...
Variation in the transfer characteristics of a-IGZO TFTs with (a) TIGZO = 25, (b) 45, (c) 75, and (...
Variation in the transfer characteristics in the forward measurement for a-IGZO TFTs with (a) TIGZO...
(a) Variation in Vth of the transfer curves of a-IGZO TFTs with various TIGZO in the reverse measur...
C−V curves before and after the NBIS duration of 104 s with (a) TIGZO = 25, (b) 45, (c) 75, and (d)...
Schematic diagram of NBIS-induced degradation mechanism in a-IGZO TFTs with (a) TIGZO < 45 and (b) ...
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Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239
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