TY - JOUR A1 - Rodriguez-Lamas, Raquel A1 - Pla, Dolors A1 - Chaix-Pluchery, Odette A1 - Meunier, Benjamin A1 - Wilhelm, Fabrice A1 - Rogalev, Andrei A1 - Rapenne, Laetitia A1 - Mescot, Xavier A1 - Rafhay, Quentin A1 - Roussel, Hervé A1 - Boudard, Michel A1 - Jiménez, Carmen A1 - Burriel, Mónica T1 - Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD JF - Beilstein Journal of Nanotechnology PY - 2019/// VL - 10 SP - 389 EP - 398 SN - 2190-4286 DO - 10.3762/bjnano.10.38 PB - Beilstein-Institut JA - Beilstein J. Nanotechnol. UR - https://doi.org/10.3762/bjnano.10.38 KW - manganite KW - metal organic chemical vapour deposition (MOCVD) KW - resistive switching KW - thin film KW - valence-change memory N2 - The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies. ER -