TY - JOUR A1 - Ivanov, Boris I. A1 - Volkhin, Dmitri I. A1 - Novikov, Ilya L. A1 - Pitsun, Dmitri K. A1 - Moskalev, Dmitri O. A1 - Rodionov, Ilya A. A1 - Il’ichev, Evgeni A1 - Vostretsov, Aleksey G. T1 - A wideband cryogenic microwave low-noise amplifier JF - Beilstein Journal of Nanotechnology PY - 2020/// VL - 11 SP - 1484 EP - 1491 SN - 2190-4286 DO - 10.3762/bjnano.11.131 PB - Beilstein-Institut JA - Beilstein J. Nanotechnol. UR - https://doi.org/10.3762/bjnano.11.131 KW - cryogenic low-noise amplifier KW - high-electron-mobility transistor (HEMT) KW - HEMT amplifier KW - microwave cryogenic amplifier KW - microwave superconducting circuit readout KW - superconducting qubit readout N2 - A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator. ER -