TY - JOUR A1 - Kleinschmidt, Ann-Kathrin A1 - Barzen, Lars A1 - Strassner, Johannes A1 - Doering, Christoph A1 - Fouckhardt, Henning A1 - Bock, Wolfgang A1 - Wahl, Michael A1 - Kopnarski, Michael T1 - Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment JF - Beilstein Journal of Nanotechnology PY - 2016/// VL - 7 SP - 1783 EP - 1793 SN - 2190-4286 DO - 10.3762/bjnano.7.171 PB - Beilstein-Institut JA - Beilstein J. Nanotechnol. UR - https://doi.org/10.3762/bjnano.7.171 KW - broad area semiconductor lasers (BAL) KW - dry-etch monitoring (RIE) KW - precise etch depth control KW - reflectance anisotropy spectroscopy (RAS) KW - III–V semiconductors N2 - Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible. ER -