Application of two-element Zn-Al metallic target for deposition of aluminum-doped zinc oxide  - analysis of sputtering process and properties of obtained transparent conducting films

Submitting author affiliation:
Wroclaw Univeristy of Science and Technology, Wroclaw, Poland

Beilstein Arch. 2024, 202418. https://doi.org/10.3762/bxiv.2024.18.v1

Published 27 Mar 2024

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Abstract

This article presents an analysis of the reactive magnetron sputtering process using a two-element Zn-Al target, with a particular focus on its application for deposition of aluminum-doped zinc oxide layers for transparent electronics. The research encompasses the deposition of AZO layers on standard Corning 7059 glass and flexible Corning Willow® glass. In order to determine optimal process conditions, a detailed analysis of the target surface state was conducted based on the ratio of working gas to reactive gas (argon/oxygen). Significant influence of the sputtering atmosphere ratio on the Al/Zn atomic ratios in the deposited AZO layers was observed, subsequently affecting their optical and electrical properties. Layers deposited in an atmosphere with an 80/20 (argon/oxygen) ratio exhibited a high light transmission coefficient in the visible range (averaging 84%) and high layer resistivity (47.4 · 10-3 Ωcm). On the other hand, layers deposited in an atmosphere with an 84/16 (argon/oxygen) ratio showed low resistivity (1.9 · 10-3 Ωcm) and a light transmission coefficient in the visible range at 65%. The most promising results were obtained for layers deposited in an atmosphere with an 82/18 ratio, characterized by both high light transmission (83%) and low layer resistivity (1.4 · 10-3 Ωcm).

Keywords: Aluminum zinc Oxide, Magnetron sputtering, AZO, conducting oxide, two element target

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When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:

Kiełczawa, S.; Wiatrowski, A.; Kiliszkiewicz, M.; Posadowski, W.; Domaradzki, J. Beilstein Arch. 2024, 202418. doi:10.3762/bxiv.2024.18.v1

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