Cite the Following Article
Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
Dapeng Wang and Mamoru Furuta
Beilstein J. Nanotechnol. 2019, 10, 1125–1130.
https://doi.org/10.3762/bjnano.10.112
How to Cite
Wang, D.; Furuta, M. Beilstein J. Nanotechnol. 2019, 10, 1125–1130. doi:10.3762/bjnano.10.112
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