Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

Wanli Yang, Shuaiqi Fan, Yuxing Liang and Yuantai Hu
Beilstein J. Nanotechnol. 2019, 10, 1833–1843. https://doi.org/10.3762/bjnano.10.178

Cite the Following Article

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws
Wanli Yang, Shuaiqi Fan, Yuxing Liang and Yuantai Hu
Beilstein J. Nanotechnol. 2019, 10, 1833–1843. https://doi.org/10.3762/bjnano.10.178

How to Cite

Yang, W.; Fan, S.; Liang, Y.; Hu, Y. Beilstein J. Nanotechnol. 2019, 10, 1833–1843. doi:10.3762/bjnano.10.178

Download Citation

Citation data can be downloaded as file using the "Download" button or used for copy/paste from the text window below.
Citation data in RIS format can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Zotero.

Presentation Graphic

Picture with graphical abstract, title and authors for social media postings and presentations.
Format: PNG Size: 506.9 KB Download

Citations to This Article

Up to 20 of the most recent references are displayed here.

Scholarly Works

  • Guo, X.; Wang, Y.; Xu, C.; Wei, Z.; Ding, C. Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium. Mathematics 2024, 12, 1075. doi:10.3390/math12071075
  • Xiao, Z.; Li, S.; Zhang, C. Analysis of Piezoelectric Semiconductor Structures Considering Both Physical and Geometric Nonlinearities. Acta Mechanica Solida Sinica 2023, 37, 72–81. doi:10.1007/s10338-023-00448-2
  • Xu, C.; Wei, P.; Wei, Z.; Guo, X. Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects. Acta Mechanica 2023, 235, 735–750. doi:10.1007/s00707-023-03771-4
  • Xu, C.; Wei, P.; Wei, Z.; Guo, X. Rayleigh wave in layered piezoelectric semiconductor with consideration of PN junction effects. Mathematics and Mechanics of Solids 2022, 28, 1817–1833. doi:10.1177/10812865221133742
  • Xu, C.; Wei, P.; Wei, Z.; Guo, X. Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects. Applied Mathematical Modelling 2022, 109, 509–518. doi:10.1016/j.apm.2022.05.004
  • Yang, W.; Wang, Y.; Hu, Y. A Tuning Mode of Asymmetric Deformations on the Electric Characteristics of Piezoelectric PN Junctions. International Journal of Applied Mechanics 2022, 14. doi:10.1142/s1758825122500351
  • Yang, W.; Liang, Y. Typical transient effects in a piezoelectric semiconductor nanofiber under a suddenly applied axial time-dependent force. Applied Mathematics and Mechanics 2021, 42, 1095–1108. doi:10.1007/s10483-021-2761-9
  • Yang, W.; Liu, J.; Hu, Y. Mechanical tuning methodology on the barrier configuration near a piezoelectric PN interface and the regulation mechanism on I–V characteristics of the junction. Nano Energy 2021, 81, 105581. doi:10.1016/j.nanoen.2020.105581
  • Yang, W.; Liu, J.; Xu, Y.; Yuantai, H. A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints. Applied Mathematics and Mechanics 2020, 41, 845–858. doi:10.1007/s10483-020-2617-9
Other Beilstein-Institut Open Science Activities