Mobility of charge carriers in self-assembled monolayers

Zhihua Fu, Tatjana Ladnorg, Hartmut Gliemann, Alexander Welle, Asif Bashir, Michael Rohwerder, Qiang Zhang, Björn Schüpbach, Andreas Terfort and Christof Wöll
Beilstein J. Nanotechnol. 2019, 10, 2449–2458. https://doi.org/10.3762/bjnano.10.235

Supporting Information

The supporting information contains (1) Figure S1 with the ToF-SIMS spectra of PAT and HDT SAM on gold/silicon wafer substrates, (2) Figure S2 with the IRRA spectrum of the PAT-SAM, the ATR spectrum and Gaussian IR spectrum of PAT, (3) Table S1 summarizing the assignment of the most intense bands in the calculated, bulk, and monolayer IR spectra of the PAT, (4) Figure S3 containing the topography STM images of PAT SAMs on a pure gold surface, (5) Figure S4 with the results of NEXAFS measurements of the PAT SAMs, (6) Figure S5 with the IV curves of the pristine PAT SAM and rectangular SAM patterns of different size, and (7) Figure S6 showing the currents measured for different PAT islands.

Supporting Information File 1: Additional figures and tables.
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Cite the Following Article

Mobility of charge carriers in self-assembled monolayers
Zhihua Fu, Tatjana Ladnorg, Hartmut Gliemann, Alexander Welle, Asif Bashir, Michael Rohwerder, Qiang Zhang, Björn Schüpbach, Andreas Terfort and Christof Wöll
Beilstein J. Nanotechnol. 2019, 10, 2449–2458. https://doi.org/10.3762/bjnano.10.235

How to Cite

Fu, Z.; Ladnorg, T.; Gliemann, H.; Welle, A.; Bashir, A.; Rohwerder, M.; Zhang, Q.; Schüpbach, B.; Terfort, A.; Wöll, C. Beilstein J. Nanotechnol. 2019, 10, 2449–2458. doi:10.3762/bjnano.10.235

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