Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

Tomi Roinila, Xiao Yu, Jarmo Verho, Tie Li, Pasi Kallio, Matti Vilkko, Anran Gao and Yuelin Wang
Beilstein J. Nanotechnol. 2014, 5, 964–972. https://doi.org/10.3762/bjnano.5.110

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Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors
Tomi Roinila, Xiao Yu, Jarmo Verho, Tie Li, Pasi Kallio, Matti Vilkko, Anran Gao and Yuelin Wang
Beilstein J. Nanotechnol. 2014, 5, 964–972. https://doi.org/10.3762/bjnano.5.110

How to Cite

Roinila, T.; Yu, X.; Verho, J.; Li, T.; Kallio, P.; Vilkko, M.; Gao, A.; Wang, Y. Beilstein J. Nanotechnol. 2014, 5, 964–972. doi:10.3762/bjnano.5.110

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