Correction: A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

  1. Daniela Lehr1,
  2. Markus R. Wagner2,
  3. Johanna Flock3,
  4. Julian S. Reparaz2,
  5. Clivia M. Sotomayor Torres2,4,
  6. Alexander Klaiber1,
  7. Thomas Dekorsy3 and
  8. Sebastian Polarz1

1Department of Chemistry, University of Konstanz, 78457 Konstanz, Germany
2ICN2 Catalan Institute of Nanoscience and Nanotechnology, Campus UAB, 08193 Bellaterra (Barcelona), Spain
3Department of Physics, University of Konstanz, 78457 Konstanz, Germany

4Catalan Institute of Research and Advanced Studies (ICREA), Barcelona 08010, Spain

  1. Corresponding author email

Associate Editor: J. J. Scheider
Beilstein J. Nanotechnol. 2015, 6, 2330–2331. doi:10.3762/bjnano.6.239
Received 01 Dec 2015, Accepted 01 Dec 2015, Published 08 Dec 2015

Keywords: chemical doping; metal oxides; semiconductor nanoparticles; single-source precursors

In the original article an incorrect graphic was displayed for Figure 8. The correct form of Figure 8 is as follows:


Figure 1: Figure 8 in the original article: Measured dielectric function of ZnO1−xClx (a) real part; (b) imaginary part with x = 0.0% (black lines), 1.4% (dark gray lines), 1.8% (gray lines) and 2.5% (light gray lines); An infrared-active phonon at about 2 THz is scaling in intensity with increasing Cl concentration.

© 2015 Lehr et al; licensee Beilstein-Institut.
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