Cite the Following Article
Metal oxide-graphene field-effect transistor: interface trap density extraction model
Faraz Najam, Kah Cheong Lau, Cheng Siong Lim, Yun Seop Yu and Michael Loong Peng Tan
Beilstein J. Nanotechnol. 2016, 7, 1368–1376.
https://doi.org/10.3762/bjnano.7.128
How to Cite
Najam, F.; Lau, K. C.; Lim, C. S.; Yu, Y. S.; Tan, M. L. P. Beilstein J. Nanotechnol. 2016, 7, 1368–1376. doi:10.3762/bjnano.7.128
Download Citation
Citation data can be downloaded as file using the "Download" button or used for copy/paste from the text window
below.
Citation data in RIS format can be imported by all major citation management software, including EndNote,
ProCite, RefWorks, and Zotero.
Presentation Graphic
| Picture with graphical abstract, title and authors for social media postings and presentations. | ||
| Format: PNG | Size: 1.3 MB | Download |
Citations to This Article
Up to 20 of the most recent references are displayed here.
Scholarly Works
- John, J. W.; Mishra, A.; Debbarma, R.; Verzhbitskiy, I.; Goh, K. E. J. Probing charge traps at the 2D semiconductor/dielectric interface. Nanoscale 2023, 15, 16818–16835. doi:10.1039/d3nr03453d
- Szabo, L.; Szabo, G.-S.; Szabo, R. Usage of Graphene in Power Systems. A Survey. In 2020 XI International Conference on Electrical Power Drive Systems (ICEPDS), IEEE, 2020. doi:10.1109/icepds47235.2020.9249296
- Chuan, M. W.; Wong, K. L.; Hamzah, A.; Rusli, S.; Alias, N. E.; Lim, C. S.; Tan, M. L. P. A review of the top of the barrier nanotransistor models for semiconductor nanomaterials. Superlattices and Microstructures 2020, 140, 106429. doi:10.1016/j.spmi.2020.106429
- Leong, C. H.; Chuan, M. W.; Wong, K. L.; Najam, F.; Yu, Y. S.; Tan, M. L. P. Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors. Semiconductor Science and Technology 2020, 35, 045023. doi:10.1088/1361-6641/ab74f2
- Chuan, M. W.; Wong, K. L.; Hamzah, A.; Riyadi, M. A.; Alias, N. E.; Tan, M. L. P. Electronic properties of silicene nanoribbons using tight-binding approach. In 2019 International Symposium on Electronics and Smart Devices (ISESD), IEEE, 2019. doi:10.1109/isesd.2019.8909598
- Wang, H.; Laurenciu, N. C.; Jiang, Y.; Cotofana, S. ISCAS - Atomistic-Level Hysteresis-Aware Graphene Structures Electron Transport Model. In 2019 IEEE International Symposium on Circuits and Systems (ISCAS), IEEE, 2019; pp 1–5. doi:10.1109/iscas.2019.8702106
