Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Siti Noorhaniah Yusoh and Khatijah Aisha Yaacob
Beilstein J. Nanotechnol. 2016, 7, 1461–1470. https://doi.org/10.3762/bjnano.7.138

Cite the Following Article

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography
Siti Noorhaniah Yusoh and Khatijah Aisha Yaacob
Beilstein J. Nanotechnol. 2016, 7, 1461–1470. https://doi.org/10.3762/bjnano.7.138

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Yusoh, S. N.; Yaacob, K. A. Beilstein J. Nanotechnol. 2016, 7, 1461–1470. doi:10.3762/bjnano.7.138

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