Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

Kuang-Yang Kou, Yu-En Huang, Chien-Hsun Chen and Shih-Wei Feng
Beilstein J. Nanotechnol. 2016, 7, 75–80. https://doi.org/10.3762/bjnano.7.9

Cite the Following Article

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications
Kuang-Yang Kou, Yu-En Huang, Chien-Hsun Chen and Shih-Wei Feng
Beilstein J. Nanotechnol. 2016, 7, 75–80. https://doi.org/10.3762/bjnano.7.9

How to Cite

Kou, K.-Y.; Huang, Y.-E.; Chen, C.-H.; Feng, S.-W. Beilstein J. Nanotechnol. 2016, 7, 75–80. doi:10.3762/bjnano.7.9

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