Supporting Information
| Supporting Information File 1: The dependency of magnetoresistance on the drain and gate voltage for Spiro-TTB/HAT-CN for different mixing ratios and resulting fit parameters. | ||
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Cite the Following Article
Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems
Thomas Reichert and Tobat P. I. Saragi
Beilstein J. Nanotechnol. 2017, 8, 1104–1114.
https://doi.org/10.3762/bjnano.8.112
How to Cite
Reichert, T.; Saragi, T. P. I. Beilstein J. Nanotechnol. 2017, 8, 1104–1114. doi:10.3762/bjnano.8.112
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