Supporting Information
Supporting Information describes the fabrication of HED-TIE devices and the electrical output characteristics for both HED-TIE and OFET devices.
| Supporting Information File 1: Additional epxerimental data. | ||
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Cite the Following Article
Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions
Sreetama Banerjee, Daniel Bülz, Danny Reuter, Karla Hiller, Dietrich R. T. Zahn and Georgeta Salvan
Beilstein J. Nanotechnol. 2017, 8, 1502–1507.
https://doi.org/10.3762/bjnano.8.150
How to Cite
Banerjee, S.; Bülz, D.; Reuter, D.; Hiller, K.; Zahn, D. R. T.; Salvan, G. Beilstein J. Nanotechnol. 2017, 8, 1502–1507. doi:10.3762/bjnano.8.150
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Scholarly Works
- Salvan, G.; Zahn, D. R. T. Towards molecular spintronics. Beilstein journal of nanotechnology 2017, 8, 2464–2466. doi:10.3762/bjnano.8.245
