Cite the Following Article
Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
Dapeng Wang and Mamoru Furuta
Beilstein J. Nanotechnol. 2018, 9, 2573–2580.
https://doi.org/10.3762/bjnano.9.239
How to Cite
Wang, D.; Furuta, M. Beilstein J. Nanotechnol. 2018, 9, 2573–2580. doi:10.3762/bjnano.9.239
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