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Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3
Figure 1: (a) SEM images of the slat section of the graphene/PMMA interface; (b) SEM image of the graphene su...
Figure 2: (a) Sketch of the setup used for bending tests; F represents the force produced by the screw S used...
Figure 3: Sketch of the setup used for the thermographic analysis of the PMMA/nanocomposite sample.
Figure 4: Sketch of the top view of the sample; A1, A2 are the (10 × 10 mm) areas on the sample monitored by ...
Figure 5: Comparison of the IRT temperature changes. The measurements were performed on various composite mat...
Figure 6: Electrical current variation due to the mechanical stress as measured on a PMMA/graphene sample.
Figure 7: Time dependence of the electrical current for PMMA/graphene. A constant voltage bias V = 5 V is app...
Figure 8: Schematic view of strain induced degenerate vibrational modes E2g shown on the left. The uniaxial s...
Figure 9: Dependence of the normalized electric resistance variation ΔR/R0 on strain ε. The bars indicate the...
Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71
Figure 1: (a) Schematic front view and (b) side view of the Si substrate produced by Fondazione Bruno Kessler...
Figure 2: (a) Scanning electron microscopy (SEM) image of MWCNT samples grown on the implantation area. The i...
Figure 3: Dark current comparison of the Si substrate and the CNT–Si heterojunction.
Figure 4: (a) Details of the dark current around the threshold voltage with a curve fit. (b) C–V plot of the ...
Figure 5: (a) Photocurrent induced by a 730 nm continuous wave, low power light source at various illuminatio...
Figure 6: (a) Dark current and photocurrent tunneling in a CNT–Si heterojunction under 378 nm light illuminat...