3 article(s) from Berbezier, Isabelle
Figure 1: SEM images of the morphological evolution of strained Mn wetting layers with different thickness af...
Figure 2: X-ray diffraction pattern of the 9 ML thick Mn wetting layer, upon annealing at 650 °C for 15 min. ...
Figure 3: SEM images of the surface after deposition of 4.5 ML Mn on Ge(111) wafer and annealing at 650 °C fo...
Figure 4: (a) SEM image of a typical NW, ≃700 nm long, obtained by deposition of a 4.5 ML thick Mn film follo...
Figure 5: EDX elemental map (Kα line), carried out on a cross-section of a NW on the surface of the 4.5 ML th...
Figure 6: Cross-section image of the NW along its length. (a) TEM image of a 1.15 μm long NW capped with a Pt...
Figure 7: (a) Length (t) and width (s) of Mn5Ge3 islands, formed on the sample surface of the 4.5 ML thick Mn...
Figure 1: SEM images acquired during APT sample preparation in a dual-beam FIB process. The image sequence (a...
Figure 2: Sketch of the sample structure and AFM measurements performed on the sample surface after MBE growt...
Figure 3: APT volume (100 × 100 × 90 nm3) obtained from the sample. Green, gray, red and blue dots correspond...
Figure 4: Top-down, 1D Ge concentration profiles measured between the islands in two different samples. The p...
Figure 5: Cross-sectional TEM image of a typical dome island (a), and side-views of two different APT volumes...
Figure 6: APT volume showing 2% of the Ni atoms, 5% of the Ge atoms, and 100% of the O atoms (the Si atoms ar...
Figure 7: Top-down 1D Ge concentration profiles measured in two different APT volumes, one in the direction p...
Figure 8: APT analysis: (a) 3D volume (120 × 120 × 100 nm3), (b) 2D map of the Ge concentration distribution ...
Figure 9: (a) APT volume (90 × 90 × 130 nm3) and (b) Si and Ge 1D concentration profiles measured in (a). Figure 9c in...
Figure 10: (a) APT volume (70 × 70 × 85 nm3) and (b) Si and Ge 1D concentration profiles measured in this volu...
Figure 11: APT measurements obtained for four APT volumes (green and red surfaces) which form almost half of a...