2 article(s) from Bischoff, Lothar
Comparison of the spot size (imaging resolution) as a function of the ion beam current for differen...
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Mass spectrum of a Ga33Bi57Li10 LMAIS at an acceleration potential of 10 kV scanned by the ExB volt...
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Examples using different ions: a) 30 keV He+, field of view (FOV): 1.5 × 1.5 µm2, trench width: 4 n...
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Summary of the imaging resolution (80/20), experimentally achieved trench width, and simulated mini...
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SRIM simulation  of the sputter profile from a 30 keV point-like beam in a gold substrate as a func...
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Comparison of the normalized ion beam profiles (normalized half profiles = beam radius) obtained fr...
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Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156
Cross-sectional Si plasmon-loss TEM images showing the Si NC formation in buried SiO2 layers of (a)...
Computer simulation of broad-beam ion mixing and nanocluster formation by thermal decomposition in ...
Comparison of different irradiation and thermal treatment conditions. In (a) and (b) low (85 Si+ nm...
Static TRIDYN-based simulation of the mixing efficiency for broad (a) and focused (b) beam irradiat...
Simulation of the formation of a single row of Si NCs by line irradiation. The sample is composed o...
Detection of a single Si NC in SiO2. (a) Si plasmon-loss filtered TEM image. A single Si NC (white)...
Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267
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