1 article(s) from Deschenes, Austin
MRAM device structure with a stack radius of 10 nm. Materials, with exception of contact regions, a...
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Characteristic J–V curve built from literature [4-7] with similar CoFeB/MgO/CoFeB MTJ with thickness of ...
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Graph of materials properties used in model construction. From top to bottom: Seebeck values of CoF...
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Schematic top-down view and quarter cross-section view of the simulated geometries. The dotted line...
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Thermal profiles of configuration II with SiO2 passivation with an applied voltage of 0.3 V in “pos...
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Thermal profiles of configuration IV with SiO2 passivation with an applied voltage of 0.3 V in “pos...
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Results for different passivation materials. Tpeak (black circles), Tfree (red upward triangles) an...
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Tpeak (black circles), Tfree (red upward triangle) and Tfixed (blue downward triangles), recorded f...
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Individual heat contributions from Peltier effect and tunneling around the MTJ for configuration I ...
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Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160
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