2 article(s) from Dong, Jianqi
(a) Schematic diagram of the epitaxial structure. (b) STEM image taken of the AlGaN/AlN/GaN heteroj...
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(a) Schematic diagrams after ICP dry etching, (b) during EC wet etching, (c) and of a single nanowi...
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(a) Experimental setup showing the stress application on the AlGaN/AlN/GaN heterojunction NW-based ...
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(a) I–t characteristic curve at a bias voltage of 0.2 V under tensile strain. (b) I–t characteristi...
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Structure diagram showing the charge distribution of the AlGaN/AlN/GaN heterojunction NW under comp...
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Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166
(a) Structure diagram of p-Si/n-ZnO NWs PDs. (b) Cross-sectional SEM image of the as-grown Si/ZnO N...
Working mechanism of PENGs. under zero bias, a depletion zone and corresponding built-in electric f...
Impact of the incident optical power density and periodic frequency on the short-circuit current. I...
Dynamic response characteristics I–t characteristics of PDs under zero bias and different incident ...
(a) Structure diagram of an ultra-thin (45 μm) p-Si/n-ZnO heterojunction device. (b) Optical image ...
Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145
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