2 article(s) from Fouckhardt, Henning

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

  1. Ann-Kathrin Kleinschmidt,
  2. Lars Barzen,
  3. Johannes Strassner,
  4. Christoph Doering,
  5. Henning Fouckhardt,
  6. Wolfgang Bock,
  7. Michael Wahl and
  8. Michael Kopnarski
  • Full Research Paper
  • Published 21 Nov 2016

  • PDF

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

  1. Thomas H. Loeber,
  2. Dirk Hoffmann and
  3. Henning Fouckhardt
  • Full Research Paper
  • Published 30 Jun 2011

  • PDF

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

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