2 article(s) from Garoi, Florin
XRD patterns of ZnO thin film samples with different thickness, namely: 200, 250, and 300 nm.
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XPS patterns of SiO2 thin films: general spectra.
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High-resolution XPS spectra acquired from SiO2 samples: (a) Si 2p3 and (b) O 1s.
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XPS survey spectra acquired from ZnO films.
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High-resolution (a) Zn 2p3 and (b) O 1s XPS spectra acquired from ZnO samples.
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Cross-sectional SEM images of the cleaved SiO2 films with measured thickness values of (a) dSiO2 = ...
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Cross-sectional SEM images of the cleaved ZnO films with measured thickness values of (a) dZnO = 20...
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Transmission spectra of thin films with various thickness values (200, 250, and 300 nm): (a) SiO2 a...
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Extinction coefficient dependence on the wavelength for (a) SiO2 and (b) ZnO thin films.
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Dependence of (αhν)2 = f(hν) on the energy of the incident photons for (a) SiO2 and (b) ZnO samples...
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Refractive index dependence on the wavelength (dispersion) for (a) SiO2 and (b) ZnO thin films.
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Photon energy dependence of the (a) real and (b) imaginary parts of permittivity for SiO2 (i) and Z...
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Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29
Cross-sectional SEM images of the cleaved as-deposited (a,c,e) and RTA-processed (b,d,f) ITO films,...
XRD patterns for the as-deposited and RTA-processed ITO samples.
XPS survey spectra in the range 0–1250 eV acquired from the as-deposited and RTA-treated ITO sample...
High-resolution a) In 3d, b) Sn 3d and c) O 1s XPS spectra acquired from as-deposited and RTA-treat...
Optical transmission spectra for the as-deposited and RTA-treated ITO samples with interference max...
a) Refractive index dependence on the wavelength (dispersion) and b) extinction coefficient depende...
Dependence of (αhν)2 = f(hν) on the energy of the incident photons, for the as-deposited and RTA-tr...
Optical conductivity dependence on the energy of the incident photons for the as-deposited and RTA-...
Photon energy dependence of the a) real and b) imaginary part of the complex dielectric permittivit...
Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149
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