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Beilstein J. Nanotechnol. 2026, 17, 454–488, doi:10.3762/bjnano.17.31
Figure 1: Schematic of the reaction of an O2 molecule with a sulfur trivacancy on the surface of WS2. Upper a...
Figure 2: Raman spectra of graphene samples produced by heat treatment of diamond-like amorphous carbon (DLC) ...
Figure 3: (a) Spatial distribution of the D/G ratio obtained on graphene with nano-Raman spectroscopy as a fu...
Figure 4: (a) Spatial distribution of the A1g/E2g peak ratio measured on MoSe2 with nano-Raman spectroscopy a...
Figure 5: Types of defects in graphene, where Raman spectroscopy has been shown to be able to identify and di...
Figure 6: Raman phase diagram to disentangle and quantify the amount of point (0D) and line (1D) defects in g...
Figure 7: Overview of STM images of common point defects in synthetically grown TMDs. Panels (a–g) show defec...
Figure 8: Local creation of sulfur vacancies in single-layer MoS2 on graphene. (a) STM topograph of MoS2 isla...
Figure 9: Self-organization of vacancies created by ion irradiation of single-layer graphene (Gr) or hexagona...
Figure 10: Mirror twin boundaries (MTBs) as gate electrodes in field-effect transistors (FETs). (a) Top- and s...
Figure 11: (a) 6.4 × 6.4 mm2 scanning photoemission spectroscopy (SPEM) image of a graphene flake recorded at ...
Figure 12: (a) SEM image of a MoS2 film grown on Au foil. (b) SPEM Mo 3d and S 2p maps of the pristine sample....
Figure 13: Atomically resolved STEM images of ion-induced pores in MoS2 with dominant electronic excitation. (...
Figure 14: Schematic of the charge exchange of highly charged (xenon) ions through 2D materials. The charge ex...
Figure 15: (a) Output characteristics of a MoS2 FET that has been irradiated with Ar+ ions with a kinetic ener...
Figure 16: Schematic illustration of the effects of the substrate on defect production in a supported 2D mater...
Figure 17: Energy surfaces for different graphitic stackings, calculated using (from left to right): GGA-D2, A...
Beilstein J. Nanotechnol. 2018, 9, 20–21, doi:10.3762/bjnano.9.3
Beilstein J. Nanotechnol. 2015, 6, 1708–1711, doi:10.3762/bjnano.6.174