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Beilstein J. Nanotechnol. 2026, 17, 1–14, doi:10.3762/bjnano.17.1
Figure 1: Schematics of the NP manipulation method using an AFM in contact mode. (a) The tip approaches and s...
Figure 2: AFM topography images (1 × 1 µm2) of Cu NPs on Si deposited at a bias voltage of 10 V with a scan a...
Figure 3: (a) Relationship between the average lateral force necessary to push Cu NPs on Si and the applied b...
Figure 4: (a) Cropped AFM image of Cu NPs deposited at a bias voltage of 1000 V onto Si, z-scale of 14 nm. Th...
Figure 5: Work of separation as a function of NP diameter determined for Cu NPs deposited at a bias voltage o...
Figure 6: Relationship between work of separation and NP diameter at different substrate bias voltages. In ad...
Figure 7: Deviation from the adhesion threshold F0 − 6πRγ as a function of NP diameter under varying substrat...
Beilstein J. Nanotechnol. 2013, 4, 208–217, doi:10.3762/bjnano.4.21
Figure 1: Schematic drawing of the PC-AFM setup. The sample in the present configuration was illuminated from...
Figure 2: (a) 5 μm × 5 μm intermittent contact mode AFM image and SEM micrograph (inset) of ZnO nanorods grow...
Figure 3: Current–voltage characteristics of dark (green curve, dashed) and illuminated state (red curve, sol...
Figure 4: (a) Photocurrent rise and relaxation during the first cycle of the experiment. The bias of −10 V wa...
Figure 5: (a) The photoconductivity spectral response from a single upright standing ZnO NR recorded using a ...
Figure 6: Schematic energy-level diagram of ZnO taking into account the existence of theoretically predicted [42]...