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Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48
Detailed sequence of GaAs surface-processing steps before the application of the ALD process (the p...
The PV structure used in the experiment.
AFM (left panels), SEM top views (right panels), and cross-sections (insets) of A-type samples (the...
AFM (left panels), SEM top views (right panels), and cross-sections (insets) of B-type samples (the...
(a–h) A2 spectra after 58 (a–d) and 76 min (e–h) of sputtering. (i–p) B1 spectra after 35 (i–l) and...
(a) PL spectra (RT) of the samples of the A series. (b) PL spectra (RT) of the samples of the B ser...
Energy band diagram of the fabricated AZO/Al2O3/p-GaAs devices.
(a) EQE of sulfur-passivated samples (A series). (b) EQE of non-passivated samples (B series).
I–V characteristics of the measured samples of A series (a) and B series (b).