1 article(s) from Lawniczak-Jablonska, Krystyna
Detailed sequence of GaAs surface-processing steps before the application of the ALD process (the p...
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The PV structure used in the experiment.
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AFM (left panels), SEM top views (right panels), and cross-sections (insets) of A-type samples (the...
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AFM (left panels), SEM top views (right panels), and cross-sections (insets) of B-type samples (the...
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(a–h) A2 spectra after 58 (a–d) and 76 min (e–h) of sputtering. (i–p) B1 spectra after 35 (i–l) and...
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(a) PL spectra (RT) of the samples of the A series. (b) PL spectra (RT) of the samples of the B ser...
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Energy band diagram of the fabricated AZO/Al2O3/p-GaAs devices.
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(a) EQE of sulfur-passivated samples (A series). (b) EQE of non-passivated samples (B series).
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I–V characteristics of the measured samples of A series (a) and B series (b).
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Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48
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