1 article(s) from Leistner, Karin
SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...
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(A–C) SEM images in cross section at higher magnification of the porous layers obtained by anodizat...
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(A) SEM images of the formation of interrupted GaAs nanowires on the (111)B surface anodized in NaC...
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(A) SEM image in cross section of a GaAs(111)B sample anodized at 3 V for 20 min in 1 M HNO3. (B, C...
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PL spectra of bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K.
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XRD pattern of the anodized GaAs(111)B sample.
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(A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for de...
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Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power den...
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Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81
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