1 article(s) from Li, Tie

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

  1. Tomi Roinila,
  2. Xiao Yu,
  3. Jarmo Verho,
  4. Tie Li,
  5. Pasi Kallio,
  6. Matti Vilkko,
  7. Anran Gao and
  8. Yuelin Wang
  • Full Research Paper
  • Published 04 Jul 2014

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

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