2 article(s) from Meyer, Jannik C
(a) SEM and (b) AFM images of MoS2 thin films (≈100 nm) deposited at RT and 400 °C. (c) Ex situ Ram...
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XRR pattern of MoS2 thin films (≈10 nm) deposited at RT and 400 °C. X-ray wavelength λ = 0.1518 nm.
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(a) Specular XRD patterns of MoS2 films (≈10 nm) deposited at RT and 400 °C. (b,c) GIXD images of M...
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(a) In situ laser annealing Raman spectra of MoS2 thin films, deposited at RT (bottom panel) and 40...
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Drain–source currents measured versus the (a) drain–source and the (b) gate-voltage for a 10 nm MoS2...
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Electrochemical HER measurements on our PVD MoS2 films directly on SiO2 covered Si substrates.
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Current generated per area of the uncoated and coated electrodes over time. The currents have been ...
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Average current density generated per uncoated and coated electrodes during the 2 h experiments. Th...
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Average hydroxide (OH–) moles produced during the 2 h experiments.
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Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113
Analysis of atomic contrast for different TEM conditions at 80 kV obtained using a code of E. Kirkl...
WIEN2k starting potential (red) compared to Doyle–Turner (black) and Kirkland (green) potentials. T...
Projected potential near the core at very high resolution (green line). The blue boxes indicate the...
Relaxed structure model of boron and oxygen substitution in graphene. Bond lengths are given in Å.
Analysis of the projected electron charge density of the boron (top) and oxygen substitution in gra...
Analysis of the projected potential of the boron (top) and oxygen substitution in graphene (bottom ...
TEM image simulation of boron substitution in graphene for an electron energy of 80 keV. The upper ...
TEM image simulation of oxygen substitution in graphene for the same conditions used in Figure 7.
Difference between the 3d electron charge density (center column) and the 3d electrostatic potentia...
TEM image simulation of an oxygen adatom on graphene for 80 kV. The first row is for Scherzer condi...
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Beilstein J. Nanotechnol. 2011, 2, 394–404, doi:10.3762/bjnano.2.45
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