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Beilstein J. Nanotechnol. 2026, 17, 1–14, doi:10.3762/bjnano.17.1
Figure 1: Schematics of the NP manipulation method using an AFM in contact mode. (a) The tip approaches and s...
Figure 2: AFM topography images (1 × 1 µm2) of Cu NPs on Si deposited at a bias voltage of 10 V with a scan a...
Figure 3: (a) Relationship between the average lateral force necessary to push Cu NPs on Si and the applied b...
Figure 4: (a) Cropped AFM image of Cu NPs deposited at a bias voltage of 1000 V onto Si, z-scale of 14 nm. Th...
Figure 5: Work of separation as a function of NP diameter determined for Cu NPs deposited at a bias voltage o...
Figure 6: Relationship between work of separation and NP diameter at different substrate bias voltages. In ad...
Figure 7: Deviation from the adhesion threshold F0 − 6πRγ as a function of NP diameter under varying substrat...