2 article(s) from Muneer, Sadid
- Full Research Paper
- Published 29 Oct 2020
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Figure 1: Schematic of the procedure used in this work for extraction of amorphized length in phase-change me...
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Figure 2: (a) Temperature profile used for annealing the as-fabricated amorphous devices to the crystalline p...
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Figure 3: Schematic of the measurement sequence. One or more pulses were applied to initially reset the cryst...
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Figure 4: Repeated post-reset pulses of 200 ns duration and 0.4 to 10.0 V amplitude (with an increment of 0.1...
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Figure 5: Schematic illustration of the calculation of the amorphized length for two post-reset re-amorphizat...
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Figure 6: (a) Approximate circuit model of an experimental setup with measured parasitic capacitance and resi...
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Figure 7: (a) Logarithmic upward drift of the threshold field Ethreshold(t) for 25 identical cells [20,29] as a func...
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Figure 8: Representative SEM images of six physically broken cells with lost connections, showing significant...
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- Full Research Paper
- Published 11 Nov 2016
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Figure 1: MRAM device structure with a stack radius of 10 nm. Materials, with exception of contact regions, a...
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Figure 2: Characteristic J–V curve built from literature [4-7] with similar CoFeB/MgO/CoFeB MTJ with thickness of ...
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Figure 3: Graph of materials properties used in model construction. From top to bottom: Seebeck values of CoF...
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Figure 4: Schematic top-down view and quarter cross-section view of the simulated geometries. The dotted line...
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Figure 5: Thermal profiles of configuration II with SiO2 passivation with an applied voltage of 0.3 V in “pos...
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Figure 6: Thermal profiles of configuration IV with SiO2 passivation with an applied voltage of 0.3 V in “pos...
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Figure 7: Results for different passivation materials. Tpeak (black circles), Tfree (red upward triangles) an...
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Figure 8: Tpeak (black circles), Tfree (red upward triangle) and Tfixed (blue downward triangles), recorded f...
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Figure 9: Individual heat contributions from Peltier effect and tunneling around the MTJ for configuration I ...
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