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2 article(s) from Muneer, Sadid

Amorphized length and variability in phase-change memory line cells

Nafisa Noor,
Sadid Muneer,
Raihan Sayeed Khan,
Anna Gorbenko and
Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

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Figure 1: Schematic of the procedure used in this work for extraction of amorphized length in phase-change me...

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Figure 2: (a) Temperature profile used for annealing the as-fabricated amorphous devices to the crystalline p...

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Figure 3: Schematic of the measurement sequence. One or more pulses were applied to initially reset the cryst...

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Figure 4: Repeated post-reset pulses of 200 ns duration and 0.4 to 10.0 V amplitude (with an increment of 0.1...

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Figure 5: Schematic illustration of the calculation of the amorphized length for two post-reset re-amorphizat...

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Figure 6: (a) Approximate circuit model of an experimental setup with measured parasitic capacitance and resi...

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Figure 7: (a) Logarithmic upward drift of the threshold field E_threshold(t) for 25 identical cells [20,29] as a func...

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Figure 8: Representative SEM images of six physically broken cells with lost connections, showing significant...

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Full Research Paper

Published 29 Oct 2020

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Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

Austin Deschenes,
Sadid Muneer,
Mustafa Akbulut,
Ali Gokirmak and
Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

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Figure 1: MRAM device structure with a stack radius of 10 nm. Materials, with exception of contact regions, a...

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Figure 2: Characteristic J–V curve built from literature [4-7] with similar CoFeB/MgO/CoFeB MTJ with thickness of ...

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Figure 3: Graph of materials properties used in model construction. From top to bottom: Seebeck values of CoF...

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Figure 4: Schematic top-down view and quarter cross-section view of the simulated geometries. The dotted line...

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Figure 5: Thermal profiles of configuration II with SiO₂ passivation with an applied voltage of 0.3 V in “pos...

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Figure 6: Thermal profiles of configuration IV with SiO₂ passivation with an applied voltage of 0.3 V in “pos...

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Figure 7: Results for different passivation materials. T_peak (black circles), T_free (red upward triangles) an...

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Figure 8: T_peak (black circles), T_free (red upward triangle) and T_fixed (blue downward triangles), recorded f...

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Figure 9: Individual heat contributions from Peltier effect and tunneling around the MTJ for configuration I ...

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Full Research Paper

Published 11 Nov 2016

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