2 article(s) from Pennelli, Giovanni
(Left) Schematics of the fabrication process and (right) SEM images of silicon nanowire forests. Th...
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Left: sketch of the measurement apparatus. Right: thermal resistance of several samples as a functi...
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Measured voltage drop (Seebeck voltage ΔVseebeck) as a function of the temperature difference betwe...
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Numerical simulations of phosphorous diffusion in silicon nanowires. The doping concentration is ma...
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Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153
Sketch of a piece of semiconducting material, placed between a hot source (heater, temperature TH) ...
a) Sketch of a thermoelectric generator: two pieces of semiconducting materials with different (opp...
Efficiency of a thermoelectric generator for different values of the material-dependent parameter Z...
The Z parameter is reported as a function of temperature for few most common TE materials (n type)....
Panel (a): Seebeck coefficient in silicon nanowires with triangular cross section as a function of ...
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Electrical conductivity σ of a silicon nanowire as a function of the nanowire width (triangular cro...
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Sketch of a top-down fabrication process for a device based on a silicon nanowire.
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A composition of SEM images of a device, based on a single silicon nanowire positioned between four...
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Sketches of the fabrication and mechanical clamping of a macroscopic thermoelectric generator based...
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Composition of SEM images of a large area network, made of silicon nanowires 3 μm long.
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Composition of SEM images of a large area network with a different texture, with respect to Figure 10. An hu...
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Sketch of the fabrication of vertical nanowire arrays. A sketch of a thermoelectric generator, base...
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SEM image showing a top view of very deep trenches in silicon, obtained by MaCE. Patterned gold str...
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The SEM image on the left shows a cross section of vertical structures, obtained by MaCE etching: P...
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SEM image of a silicon nanowire “forest” (cross-section), fabricated by MaCE of silicon in an HF/Ag...
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Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141
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