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1 article(s) from Polyakov, Vladimir

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

Christoph Schreyvogel,
Vladimir Polyakov,
Sina Burk,
Helmut Fedder,
Andrej Denisenko,
Felipe Fávaro de Oliveira,
Ralf Wunderlich,
Jan Meijer,
Verena Zuerbig,
Jörg Wrachtrup and
Christoph E. Nebel

Letter
Published 16 Nov 2016

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1. Figure 1: Formation and quenching of NV centres. (a) PL-intensity mapping performed on the diamond surface wh...
  
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2. Figure 2: In-plane Schottky diode from diamond. (a) Schematic figure of an in-plane Al Schottky diode on an H...
  
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3. Figure 3: Active charge state control of a single NV centre. At zero bias there is only a PL-background of th...
  
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4. Figure 4: Schematic setup for time-resolved measurement of NV-intensity. To record the time evolution of the ...
  
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5. Figure 5: Fast charge state switching. The result of the time-resolved NV-intensity measurement shows that sw...
  
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6. Figure 6: Time constant for charge state switching. Time constants deduced from fitting an exponential functi...
  
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7. Figure 7: Degradation effect. After several 1000 switching cycles, the measured time constants for dischargin...
  
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8. Figure 8: Simultaneous measurement of NV⁻ and NV⁰ intensity. A time-resolved measurement of NV⁻ (red curve) a...
  
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Graphical Abstract

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

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