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Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29
Figure 1: XRD patterns of ZnO thin film samples with different thickness, namely: 200, 250, and 300 nm.
Figure 2: XPS patterns of SiO2 thin films: general spectra.
Figure 3: High-resolution XPS spectra acquired from SiO2 samples: (a) Si 2p3 and (b) O 1s.
Figure 4: XPS survey spectra acquired from ZnO films.
Figure 5: High-resolution (a) Zn 2p3 and (b) O 1s XPS spectra acquired from ZnO samples.
Figure 6: Cross-sectional SEM images of the cleaved SiO2 films with measured thickness values of (a) dSiO2 = ...
Figure 7: Cross-sectional SEM images of the cleaved ZnO films with measured thickness values of (a) dZnO = 20...
Figure 8: Transmission spectra of thin films with various thickness values (200, 250, and 300 nm): (a) SiO2 a...
Figure 9: Extinction coefficient dependence on the wavelength for (a) SiO2 and (b) ZnO thin films.
Figure 10: Dependence of (αhν)2 = f(hν) on the energy of the incident photons for (a) SiO2 and (b) ZnO samples...
Figure 11: Refractive index dependence on the wavelength (dispersion) for (a) SiO2 and (b) ZnO thin films.
Figure 12: Photon energy dependence of the (a) real and (b) imaginary parts of permittivity for SiO2 (i) and Z...
Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149
Figure 1: Cross-sectional SEM images of the cleaved as-deposited (a,c,e) and RTA-processed (b,d,f) ITO films,...
Figure 2: XRD patterns for the as-deposited and RTA-processed ITO samples.
Figure 3: XPS survey spectra in the range 0–1250 eV acquired from the as-deposited and RTA-treated ITO sample...
Figure 4: High-resolution a) In 3d, b) Sn 3d and c) O 1s XPS spectra acquired from as-deposited and RTA-treat...
Figure 5: Optical transmission spectra for the as-deposited and RTA-treated ITO samples with interference max...
Figure 6: a) Refractive index dependence on the wavelength (dispersion) and b) extinction coefficient depende...
Figure 7: Dependence of (αhν)2 = f(hν) on the energy of the incident photons, for the as-deposited and RTA-tr...
Figure 8: Optical conductivity dependence on the energy of the incident photons for the as-deposited and RTA-...
Figure 9: Photon energy dependence of the a) real and b) imaginary part of the complex dielectric permittivit...
Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142
Figure 1: X-ray diffractograms of Ge:SiO2 thin films deposited at 300, 400 and 500 °C.
Figure 2: HRTEM images of the Ge:SiO2 thin film co-deposited on a Si substrate at 500 °C: (a) corresponding S...
Figure 3: Schematic of sample structure and electrical measurement.
Figure 4: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...
Figure 5: The charge carriers transport mechanism described schematically.
Figure 6: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...
Figure 7: Photodetector responsiveness: a) spectral photoresponsivity, for Al/n-Si/Ge:SiO2/ITO and Al/n-Si/SiO...
Figure 8: Photovoltaic response speed of the photodetector structure (fabricated at 400 °C) under pulsed (Pin...